Transient spectroscopy and kinetics of poly(1-(4-substituted-phenyl)-2-propen-1-ones)

1986 ◽  
Vol 19 (6) ◽  
pp. 1637-1643 ◽  
Author(s):  
P. Hrdlovic ◽  
J. C. Scaiano ◽  
I. Lukac ◽  
J. E. Guillet
Keyword(s):  
Transient Spectroscopy ◽  
Kinetics Of

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Fluorenone oxide: transient spectroscopy and kinetics of its formation and reactions

1985 ◽  
Vol 107 (16) ◽  
pp. 4616-4620 ◽  
Author(s):  
H. L. Casal ◽  
M. Tanner ◽  
N. H. Werstiuk ◽  
J. C. Scaiano
Keyword(s):  
Transient Spectroscopy ◽  
Kinetics Of

Evolution of Charged Gap Statesin a- Si:H Under Light Exposure

2003 ◽  
Vol 762 ◽  
Author(s):  
M. Zeman ◽  
V. Nádaždy ◽  
R.A.C.M.M. van Swaaij ◽  
R. Durný ◽  
J.W. Metselaar
Keyword(s):  
Deep Level ◽  
Light Exposure ◽  
Dark Conductivity ◽  
Initial Energy ◽  
Energy Distributions ◽  
Transient Spectroscopy ◽  
Induced Changes ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Positively Charged

AbstractThe charge deep-level transient spectroscopy (Q-DLTS) experiments on undoped hydrogenated amorphous silicon (a-Si:H) demonstrate that during light soaking the states in the upper part of the gap disappear, while additional states around and below midgap are created. Since no direct correlation is observed in light-induced changes of the three groups of states that we identify from the Q-DLTS signal, we believe that we deal with three different types of defects. Positively charged states above midgap are related to a complex formed by a hydrogen molecule and a dangling bond. Negatively charged states below midgap are attributed to floating bonds. Various trends in the evolution of dark conductivity due to light soaking indicate that the kinetics of light-induced changes of the three gap-state components depend on their initial energy distributions and on the spectrum and intensity of light during exposure.

The Kinetics of Capture and Emission of Discrete DX Related Centers in Silicon Doped AlGaAs Using Time Analyzed Transient Spectroscopy

1995 ◽  
Vol 378 ◽  
Author(s):  
Sandeep Agarwal ◽  
Y. N. Mohapatra
Keyword(s):  
Accurate Identification ◽  
Spectral Lineshape ◽  
Filling Time ◽  
Capacitance Voltage ◽  
Dx Center ◽  
Voltage Transients ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
Kinetics Of

AbstractThe kinetics of multiple DX related emission centers are studied using the isothermal Time Analyzed Transient Spectroscopy (TATS) of constant capacitance voltage transients. Four distinct emitting centers have been obtained using higher order TATS in the same silicon doped Al0.33As0.67As sample without use of hydrostatic pressure. Accurate identification of the multiple DX states has allowed a better understanding of the charge redistribution process during capture. Improved resolution due to increase in order of spectroscopy has enabled quantitative fitting of spectral lineshape and thus accounting for degree of nonexponentiality associated with each of the four discrete centers. The capture kinetics of these centers are studied over six orders in magnitude of filling time. The resulting quality of kinetic data makes possible detailed quantitative comparison with kinetics predicted by positive U and negative U models of DX centers. We show that our data is in agreement with positive U model of DX center.

Electrical and Electrochemical Properties of a-C:N:H Films

1999 ◽  
Vol 593 ◽  
Author(s):  
Yu.V. Pleskov ◽  
M.D. Krotova ◽  
V.I. Polyakov ◽  
A.V. Khomich ◽  
A.I. Rukovishnikov ◽  
...  
Keyword(s):  
Point Defects ◽  
Electrochemical Impedance ◽  
Deep Level ◽  
Ion Beam ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Active Point ◽  
Transient Spectroscopy ◽  
Quartz Substrates ◽  
Kinetics Of

ABSTRACTElectrochemical impedance in H2SO4 solutions and kinetics of redox reactions in the Fe(CN)63-/4- system were studied on amorphous nitrogenated diamond-like carbon (a-C:N:H) thin-film electrodes. Parameters of point defects (trapping centers) were also measured by the Deep Level Transient Spectroscopy techniques. The films have been fabricated on p- and i-type silicon and quartz substrates, using direct ion beam deposition from an RF inductively coupled N2+ CH4 plasma source. The increase in N2/CH4 ratio in the gas mixture lead to a decrease in the electrical resistivity and optical bandgap of the films from 3×1010to 5×106 Ω cm and from 1.3 to 0.6 eV, respectively. Simultaneously, the concentration of electrically active point defects increased significantly and the charge transfer at the a-C:N:H film/redox electrolyte interface was facilitated

Hydrogen and Lithium Passivation of Gold in Silicon: A Comparative Study

1995 ◽  
Vol 378 ◽  
Author(s):  
E. ö. Sveinbjörnsson ◽  
S. Kristjansson ◽  
O. Engström ◽  
H. P. Gislason
Keyword(s):  
Complex Formation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Opposite Charge ◽  
Active Complex ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Coulomb Attraction

AbstractWe report studies of passivation of the gold center in silicon by hydrogen and lithium using deep level transient spectroscopy (DLTS), capacitance voltage (CV) profiling and secondary ion mass spectroscopy (SIMS). Both lithium and hydrogen are able to remove the electrical activity of the gold center from the silicon band gap but the passivation mechanisms are different. In the case of lithium the passivation is most likely due to a Coulomb attraction between lithium donors Li+ and gold acceptors Au−. No complex formation is observed between Li+ and Au0. In contrast, hydrogen is able to passivate the gold center without the need of opposite charge states of the species involved. Two Au-H complexes are observed, one (G) electrically active, and another (PA) passive. Based on the annealing kinetics of these complexes we propose that the active complex is a Au-H pair and that the passive complex contains two H atoms (Au-H2).

Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy

2021 ◽  
Vol 36 (5) ◽  
pp. 055015
Author(s):  
Jiaxiang Chen ◽  
Haoxun Luo ◽  
HaoLan Qu ◽  
Min Zhu ◽  
Haowen Guo ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Trap Emission ◽  
Transient Spectroscopy ◽  
Kinetics Of

Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers

2013 ◽  
Vol 205-206 ◽  
pp. 341-345 ◽  
Author(s):  
A.S. Loshachenko ◽  
Oleg F. Vyvenko ◽  
Oleg Kononchuk
Keyword(s):  
Activation Energy ◽  
Deep Level ◽  
Total Concentration ◽  
Reference Sample ◽  
Dislocation Network ◽  
Hydrogen Penetration ◽  
Wet Chemical ◽  
Transient Spectroscopy ◽  
Hydrogen Bound ◽  
Kinetics Of

The kinetics of hydrogen penetration through dislocation networks produced by silicon wafer bonding are investigated by means of reverse bias annealing (RBA) procedure. By using the combination of capacitance-voltage (CV) profiling of net-acceptor concentration and deep level transient spectroscopy (DLTS) the total concentration of H introduced in the samples during wet–chemical etching at room temperature was defined. Two processes with the different time constants τ1and τ2was found for the bonded sample. The slow process τ1with an activation energy of (1.25±0.13) eV was analogous to that in the reference sample and corresponded to the dissociation of boron-hydrogen pairs. The fast process τ2was found to exhibit a lower activation energy of (0.87±0.25) eV and was identified as the release of hydrogen bound at screw dislocations by their elastic strains.

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