Surface Morphology and Frictional Property of Polyethylene Single Crystals Studied by Scanning Force Microscopy

1995 ◽  
Vol 28 (13) ◽  
pp. 4768-4770 ◽  
Author(s):  
Tisato Kajiyama ◽  
Isao Ohki ◽  
Atsushi Takahara
Keyword(s):  
Surface Morphology ◽  
Single Crystals ◽  
Scanning Force Microscopy ◽  
Frictional Property ◽  
Force Microscopy ◽  
Scanning Force

Surface morphology of a liquid crystalline side-chain polymer investigated by scanning force microscopy

1994 ◽  
Vol 32 (4) ◽  
pp. 487-492 ◽  
Author(s):  
K. D. Jandt ◽  
D. G. McDonnell ◽  
J. M. Blackmore ◽  
M. J. Miles
Keyword(s):  
Surface Morphology ◽  
Liquid Crystalline ◽  
Scanning Force Microscopy ◽  
Side Chain ◽  
Chain Polymer ◽  
Force Microscopy ◽  
Scanning Force

Ferroelectric domain structures in PZN–8%PT single crystals studied by scanning force microscopy

2001 ◽  
Vol 119 (1) ◽  
pp. 7-12 ◽  
Author(s):  
M Abplanalp ◽  
D Barošová ◽  
P Bridenbaugh ◽  
J Erhart ◽  
J Fousek ◽  
...  
Keyword(s):  
Single Crystals ◽  
Scanning Force Microscopy ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Domain Structures ◽  
Scanning Force

Investigation of Domain Wall Velocity and Nucleation Rate in Polarization Switching of Epitaxial Pb(Zr,Ti)O3 Thin Films Using Piezoresponse Scanning Force Microscopy

2002 ◽  
Vol 748 ◽  
Author(s):  
H. Fujisawa ◽  
T. Yagi ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Single Crystals ◽  
Nucleation Rate ◽  
Switching Time ◽  
Scanning Force Microscopy ◽  
Wall Velocity ◽  
Force Microscopy ◽  
Domain Wall Velocity ◽  
Scanning Force

ABSTRACTDomain wall velocity and nucleation rate in 250nm-thick epitaxial Pb(Zr,Ti)O3 thin films were studied by piezoresponse scanning force microscopy (PFM). Domain growth observed after applying switching pulses shorter than the switching time can be described using the Ishibashi theory. At a pulse voltage of +5V, experimental results indicated that new nucleation occurred during the switching period, which corresponded to the Category I in the Ishibashi theory. Switching time, domain wall velocity and nucleation rate at +5V can be obtained as 70ns, 8.3m/s and 43μs-1 μm-2, respectively. As compared with experimental results reported in BaTiO3 single crystals, domain wall velocity was much smaller but nucleation rate was much larger than those in single crystals.

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