Reductive Preparation of Carbyne with High Yield. An in Situ Raman Scattering Study

1995 ◽  
Vol 28 (1) ◽  
pp. 344-353 ◽  
Author(s):  
J. Kastner ◽  
H. Kuzmany ◽  
L. Kavan ◽  
F. P. Dousek ◽  
J. Kuerti
2011 ◽  
Vol 134 (23) ◽  
pp. 234503 ◽  
Author(s):  
T. Deschamps ◽  
C. Martinet ◽  
D. de Ligny ◽  
J. L. Bruneel ◽  
B. Champagnon

1993 ◽  
Vol 47 (7) ◽  
pp. 952-956 ◽  
Author(s):  
Hajime Seki ◽  
Mahesh G. Samant

The nonenhanced Raman scattering spectra from CN ions adsorbed at the electrolyte/Pd electrode interface has been obtained with the use of a combination of a Cassegrain lens and a multichannel detector. Previously reported FT-IR spectra under similar conditions were used to help interpret the Raman-scattering results. The scattering results are explained on the basis of five bands assigned to the CN stretches. The position of these bands at 1950, 2060, 2090, 2150, and 2220 cm−1 are assigned to the covalent bond to a bridge site, covalent bond to an atop site, and ionic bond to Pd, Pd(CN)42−, and Pd(CN)2. This study shows that it is possible to obtain an enhancement of about 103 by use of the Cassegrain system described here.


2021 ◽  
Vol 119 (13) ◽  
pp. 132905
Author(s):  
Yan Ye ◽  
Anyang Cui ◽  
Lichen Gao ◽  
Kai Jiang ◽  
Liangqing Zhu ◽  
...  

1982 ◽  
Vol 20 ◽  
Author(s):  
C.H. Olk ◽  
V. Yeh ◽  
F.J. Holler ◽  
P.C. Eklund

ABSTRACTIn situ Raman scattering studies of the high-frequency carbon intralayer modes in graphite-H2SO4 have been carried out during the electrochemical intercalation of graphite in sulfuric acid. The data show that within an optical depth of ∼ 200 Å the entire c-face undergoes a sudden transition to the next lower stage (n−1) at the moment when the bulk has just completed forming stage n. Raman data collected in the “overcharge” and “overoxidation” regimes of the electrochemical synthesis indicate rapid shifting of the peaks during these times, indicating a significant increase in the oxidation of the carbon layers.


1995 ◽  
Vol 42 (1) ◽  
pp. 7-11 ◽  
Author(s):  
T.G. Bilodeau ◽  
K.J. Ewing ◽  
G.M. Nau ◽  
I.D. Aggarwai

2000 ◽  
Vol 113 (10) ◽  
pp. 553-558 ◽  
Author(s):  
A.A. Sirenko ◽  
J.R. Fox ◽  
I.A. Akimov ◽  
X.X. Xi ◽  
S. Ruvimov ◽  
...  

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