Scanning Force Microscopy with Chemical Specificity:  An Extensive Study of Chemically Specific Tip−Surface Interactions and the Chemical Imaging of Surface Functional Groups

Langmuir ◽  
1997 ◽  
Vol 13 (16) ◽  
pp. 4357-4368 ◽  
Author(s):  
Eric W. van der Vegte ◽  
Georges Hadziioannou
Keyword(s):  
Functional Groups ◽  
Scanning Force Microscopy ◽  
Surface Interactions ◽  
Chemical Imaging ◽  
Extensive Study ◽  
Surface Functional Groups ◽  
Force Microscopy ◽  
Scanning Force

scholarly journals Structure, Surface Interactions, and Compressibility of Bacterial S-Layers through Scanning Force Microscopy and the Surface Force Apparatus

2006 ◽  
Vol 90 (5) ◽  
pp. 1821-1829 ◽  
Author(s):  
Alberto Martín-Molina ◽  
Susana Moreno-Flores ◽  
Eric Perez ◽  
Dietmar Pum ◽  
Uwe B. Sleytr ◽  
...  
Keyword(s):  
Surface Force ◽  
Scanning Force Microscopy ◽  
Surface Interactions ◽  
Surface Force Apparatus ◽  
Force Microscopy ◽  
Structure Surface ◽  
Scanning Force

Distributions of Functional Groups in Plasma Polymerized Allylamine Films by Scanning Force Microscopy Using Functionalized Probe Tips

2000 ◽  
Vol 12 (12) ◽  
pp. 3689-3694 ◽  
Author(s):  
Holger Schönherr ◽  
Menno T. van Os ◽  
Renate Förch ◽  
Richard B. Timmons ◽  
Wolfgang Knoll ◽  
...  
Keyword(s):  
Functional Groups ◽  
Scanning Force Microscopy ◽  
Force Microscopy ◽  
Scanning Force

Chemical imaging by scanning force microscopy

1995 ◽  
Vol 7 (6) ◽  
pp. 549-551 ◽  
Author(s):  
Sabri Akari ◽  
Dieter Horn ◽  
Harald Keller ◽  
Wolfgang Schrepp
Keyword(s):  
Scanning Force Microscopy ◽  
Chemical Imaging ◽  
Force Microscopy ◽  
Scanning Force

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Log-log scale roughness spectroscopy of surfaces

1993 ◽  
Vol 51 ◽  
pp. 224-225
Author(s):  
P. Fraundorf ◽  
B. Armbruster
Keyword(s):  
Power Spectrum ◽  
Autocorrelation Function ◽  
Power Spectra ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Lateral Structure ◽  
Scale Roughness

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

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