Semiquantitative Study of the EDC/NHS Activation of Acid Terminal Groups at Modified Porous Silicon Surfaces

Langmuir ◽  
2010 ◽  
Vol 26 (2) ◽  
pp. 809-814 ◽  
Author(s):  
S. Sam ◽  
L. Touahir ◽  
J. Salvador Andresa ◽  
P. Allongue ◽  
J.-N. Chazalviel ◽  
...  
1990 ◽  
Author(s):  
P. Gupta ◽  
A. C. Dillon ◽  
A. S. Bracker ◽  
S. M. George

1993 ◽  
Vol 295 (1-2) ◽  
pp. L998-L1004 ◽  
Author(s):  
A.C. Dillon ◽  
M.B. Robinson ◽  
S.M. George

2003 ◽  
Vol 107 (48) ◽  
pp. 13459-13462 ◽  
Author(s):  
Rabah Boukherroub ◽  
Alain Petit ◽  
André Loupy ◽  
Jean-Noël Chazalviel ◽  
François Ozanam

2005 ◽  
Vol 34 (2) ◽  
pp. 226-227 ◽  
Author(s):  
Bing Xia ◽  
Jun Li ◽  
Shou-Jun Xiao ◽  
Dong-Jie Guo ◽  
Jing Wang ◽  
...  

Langmuir ◽  
2002 ◽  
Vol 18 (16) ◽  
pp. 6081-6087 ◽  
Author(s):  
James T. C. Wojtyk ◽  
Kim A. Morin ◽  
Rabah Boukherroub ◽  
Danial D. M. Wayner

2014 ◽  
Vol 86 (23) ◽  
pp. 11722-11726 ◽  
Author(s):  
Nicolas V. Schwab ◽  
Moriam O. Ore ◽  
Marcos N. Eberlin ◽  
Sylvie Morin ◽  
Demian R. Ifa

2000 ◽  
Vol 182 (1) ◽  
pp. 109-115 ◽  
Author(s):  
M.P. Stewart ◽  
E.G. Robins ◽  
T.W. Geders ◽  
M.J. Allen ◽  
H. Cheul Choi ◽  
...  

Author(s):  
Ming-Fang Wang ◽  
Nithin Nraghuna ◽  
Babak Ziaie

In this paper, we report on an inexpensive non-lithographic approach to create superhydrophobic silicon surfaces using porous silicon technology. We have used a two-step method to create an unstable hierarchical (micro-nano) superhydrophobic silicon surface. Our technique is a unique combination of a high current density (170mA/cm2) porous silicon formation step followed by a wet etching step in BOE/HNO3. Porous silicon layers, of both n- and p-type wafers were used in these experiments. The contact and rolling angles were measured for: 1) regular porous silicon, 2) porous silicon with hierarchical fractal-shape structure, and 3) hierarchical fractal-shape porous silicon after the wet etching step. For both n- and p-type wafers, the contact angles of regular porous silicon (nonhierarchical) were around 120° with a rolling angle of 90°. With hierarchical structure, the contact angle increased to 135° and after addition wet etching, the contact angle approached 160° (superhydrophobic). Besides, after wet etching step the surface became extremely unstable showing a very low rolling angle (<1°).


1997 ◽  
Vol 6 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. E. Aliev ◽  
Sh. U. Yuldashev ◽  
P. K. Khabibullaev ◽  
M. H. Khan ◽  
F. A. Khalid

2010 ◽  
Vol 34 (1) ◽  
pp. 29-33 ◽  
Author(s):  
Stéphanie Pace ◽  
Philippe Gonzalez ◽  
Jean-Marie Devoisselle ◽  
Pierre-Emmanuel Milhiet ◽  
Daniel Brunel ◽  
...  

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