Low-Temperature Fabrication of Alkali Metal–Organic Charge Transfer Complexes on Cotton Textile for Optoelectronics and Gas Sensing

Langmuir ◽  
2014 ◽  
Vol 31 (4) ◽  
pp. 1581-1587 ◽  
Author(s):  
Rajesh Ramanathan ◽  
Sumeet Walia ◽  
Ahmad Esmaielzadeh Kandjani ◽  
Sivacarendran Balendran ◽  
Mahsa Mohammadtaheri ◽  
...  
1991 ◽  
Vol 42 (1-2) ◽  
pp. 1865-1868 ◽  
Author(s):  
Akira Miura ◽  
Shinya Aoki ◽  
Nobuhiro Gemma ◽  
Toshio Nakayama ◽  
Makoto Azuma

2020 ◽  
Vol 44 (11) ◽  
pp. 4376-4385 ◽  
Author(s):  
Pooja Daga ◽  
Prakash Majee ◽  
Debal Kanti Singha ◽  
Priyanka Manna ◽  
Sayani Hui ◽  
...  

A Co(ii)-based metal–organic compound exhibits luminescence turn-on by Al3+ and quenching by Fe3+ due to the formation of charge-transfer complexes/adducts.


2016 ◽  
Vol 4 (47) ◽  
pp. 11173-11179 ◽  
Author(s):  
Faegheh Hoshyargar ◽  
Mahnaz Shafiei ◽  
Carlo Piloto ◽  
Nunzio Motta ◽  
Anthony P. O'Mullane

The ability to detect and monitor toxic and greenhouse gases is highly important, however to achieve this at room temperature and allow for remote sensing applications is a significant challenge.


2016 ◽  
Vol 109 (8) ◽  
pp. 081603 ◽  
Author(s):  
H.-C. Shin ◽  
S. J. Ahn ◽  
H. W. Kim ◽  
Y. Moon ◽  
K. B. Rai ◽  
...  

1967 ◽  
Vol 46 (3) ◽  
pp. 837-842 ◽  
Author(s):  
Hiroo Inokuchi ◽  
Nobuyuki Wakayama ◽  
Tamotsu Kondow ◽  
Yoshihiro Mori

2008 ◽  
Vol 1071 ◽  
Author(s):  
Robert Mueller ◽  
Joris Billen ◽  
Aaron Katzenmeyer ◽  
Ludovic Goux ◽  
Dirk J. Wouters ◽  
...  

AbstractMemory cells based on Cu+ and Ag+ metal-organic charge-transfer complexes, as for example CuTCNQ (where TCNQ denotes 7,7',8,8'-tetracyanoquinodimethane), are well known for their bistable resistive electrical switching since 1979. The switching mechanism however remained unclear for very long time. In this contribution we describe the different views (bulk vs. interfacial switching), give evidence for interfacial switching in the case of CuTCNQ, and present a model allowing explaining the bipolar resistive electrical switching by an interfacial effect, even for experiments considered until now as proof for bulk switching. The proposed switching mechanism is based on bridging of an ion-permeable layer (or gap) by conductive Cu channels, which are formed and dissolved by an electrochemical reaction implying monovalent Cu+ cations, originating from a solid ionic conductor (as for example CuTCNQ). The model was furthermore generalized to other memory systems consisting of a permeable layer and a solid ionic conductor, including also inorganic solid ionic conductors as for example Ag2S.


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