Differential Etching of ZnO Native Planes under Basic Conditions

Langmuir ◽  
2012 ◽  
Vol 28 (13) ◽  
pp. 5633-5641 ◽  
Author(s):  
Nathan Johann Nicholas ◽  
William Ducker ◽  
George V. Franks
Keyword(s):  
Differential Etching

Surface nanoscale periodic structures in congruent lithium niobate by domain reversal patterning and differential etching

2005 ◽  
Vol 87 (23) ◽  
pp. 233106 ◽  
Author(s):  
Simonetta Grilli ◽  
Pietro Ferraro ◽  
Paolo De Natale ◽  
Bruno Tiribilli ◽  
Massimo Vassalli
Keyword(s):  
Lithium Niobate ◽  
Periodic Structures ◽  
Differential Etching ◽  
Congruent Lithium Niobate ◽  
Domain Reversal

Microstructure evolution mechanism of Al/Mg dissimilar joint during friction stir welding

2020 ◽  
Vol 117 (3) ◽  
pp. 311 ◽  
Author(s):  
Wei Chen ◽  
Wenxian Wang ◽  
Zepeng Liu ◽  
Decheng An ◽  
Ning Shi ◽  
...  
Keyword(s):  
Friction Stir Welding ◽  
Flow Pattern ◽  
Microstructure Evolution ◽  
Ring Structure ◽  
Reflection Effect ◽  
Nugget Zone ◽  
Friction Stir ◽  
Flow Features ◽  
Differential Etching ◽  
Onion Ring

A butt friction stir welding (FSW) process was performed on 6061 Al and AZ31 Mg plates. The microstructure evolutions of the three main regions in the nugget zone (NZ) retained in the FSW joint were systematically investigated to clarify the joint formation mechanism during FSW. The differential etching of these microstructural features was found to produce very vivid flow features. During FSW, the material in the shoulder affected zone (SAZ) was mainly driven by the shoulder, and only a small amount of it was driven by the pin. A strip of Al transferred by the pin from the retreating side (RS) to the advancing side (AS) contacted and reacted with Mg, thus forming intermetallic compounds (IMCs) (e.g., Mg17Al12 and Al3Mg2). Due to the stirring action and tilted angle of the threaded pin, a banded structure (BS) feature tilted at approximately 45° was produced by the alternating lamellae of IMCs. The appearance of an onion ring structure occurred in the severely deformed zone (SDZ), which could be attributed to the reflection effect of the imaginary die wall. Finally, the overall flow pattern of the joint was obtained.

scholarly journals Ridge waveguides in lithium niobate fabricated by differential etching following spatially selective domain inversion

1999 ◽  
Vol 74 (10) ◽  
pp. 1487-1488 ◽  
Author(s):  
Ian E. Barry ◽  
Graeme W. Ross ◽  
Peter G. R. Smith ◽  
Robert W. Eason
Keyword(s):  
Lithium Niobate ◽  
Ridge Waveguides ◽  
Differential Etching ◽  
Domain Inversion

Differential etching of chalcogenides for infrared photonic waveguide structures

2008 ◽  
Vol 354 (10-11) ◽  
pp. 813-816 ◽  
Author(s):  
Brian J. Riley ◽  
S.K. Sundaram ◽  
Bradley R. Johnson ◽  
Laxmikant V. Saraf
Keyword(s):  
Differential Etching

Multi-Layer Automatic Front Side Delayering Technique for Constructional Analysis

2004 ◽  
Author(s):  
H. Coulson ◽  
K. Williamson ◽  
Z. Shafrir ◽  
I. Grimberg ◽  
E. Raz
Keyword(s):  
Integrated Circuits ◽  
Chemical Etching ◽  
Analysis Time ◽  
Physical Analysis ◽  
Front Side ◽  
Simultaneous Measurements ◽  
Automatic Polishing ◽  
Differential Etching ◽  
Metal Layers ◽  
Direct Inspection

Abstract Front side mechanical polishing of integrated circuits poses several technological complexities. This paper describes a unique automatic front side polishing technique, based on polishing at a shallow angle and exposing several layers, for NMOS/PMOS devices. This polishing technique is based on polishing at a very shallow angle up to 0.50 with plus or minus 0.1 micrometer accuracy to the target exposing several layers. The paper provides information on the several steps in the delayering process, namely deprocesing, chemical etching, and physical analysis. The benefits of the automatic polishing method developed are: exposing several metal layers without the need to deprocess to each layer separately, thus reducing both the polishing and the analysis time; the polishing can be stopped at any specific layer; direct and simultaneous measurements of structure overlays; direct inspection of embedded defects; and reducing artifacts associated with the etching process such as oxide steps, over etch, differential etching.

scholarly journals Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs

2010 ◽  
Vol 645-648 ◽  
pp. 791-794 ◽  
Author(s):  
Naoya Okamoto ◽  
Kenji Imanishi ◽  
Toshihide Kikkawa ◽  
Naoki Nara
Keyword(s):  
Etch Rate ◽  
High Rate ◽  
Gan Hemt ◽  
Icp Etching ◽  
Via Holes ◽  
Etching Profile ◽  
Etching Behavior ◽  
Differential Etching ◽  
The Difference

We discuss the influence of negative charging on high-rate ICP etching of SiC via-holes for GaN HEMT MMICs. There is large differential etching behavior such as etch rate, etching profile, and RIE lag between S.I.- and n-SiC substrates because of the difference in wafer heating and negative charging of the sidewall during etching between both substrates. We analyze the difference in negative charging between both substrates by simulating the etching profile.

Chemically attaching polyhydroxyethylmethacrylate brush on substrate surface, derivation, and the role in differential etching

2007 ◽  
Vol 106 (2) ◽  
pp. 723-729 ◽  
Author(s):  
Feng Zhou ◽  
Zonggang Mu ◽  
Tingmei Wang ◽  
Zhilu Liu ◽  
Bo Yu ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Differential Etching
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