Interface Engineering in High-Performance Low-Voltage Organic Thin-Film Transistors Based on 2,7-Dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes

Langmuir ◽  
2011 ◽  
Vol 27 (24) ◽  
pp. 15340-15344 ◽  
Author(s):  
Atefeh Y. Amin ◽  
Knud Reuter ◽  
Timo Meyer-Friedrichsen ◽  
Marcus Halik
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Engineering

Fullerene-derivative as interlayer for high performance organic thin-film transistors

2018 ◽  
Vol 6 (22) ◽  
pp. 6052-6057 ◽  
Author(s):  
Jiahui Tan ◽  
Jakob Sorensen ◽  
Huanli Dong ◽  
Wenping Hu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Fullerene Derivative ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
Engineering Strategy

The present work demonstrates a new interface engineering strategy to improve pentacene transistors performance by using a fullerene-derivative interlayer.

High-Performance Low Voltage Organic Thin-Film Transistors

2005 ◽  
Vol 870 ◽  
Author(s):  
Stijn De Vusser ◽  
Soeren Steudel ◽  
Kris Myny ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Organic Thin Film Transistors ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Organic Thin Film ◽  
Supply Voltages

AbstractIn this work, we report on high-performance low voltage pentacene Organic Thin-Film Transistors (OTFT's) and circuits. Inverters and ring oscillators have been designed and fabricated. At 15 V supply voltage, we have observed invertors showing a voltage gain of 9 and an output swing of more than 13 V. As for the ring oscillators, oscillations started at supply voltages as low as 8.5 V. At a supply voltage of only 15 V, a stage delay time of 3.3 νs is calculated from experimental results.We believe that these results show for the first time a high speed ring oscillator at relatively low supply voltages. The required supply voltages can be obtained by rectification using an organic (pentacene) diode. These results may have an important impact on the realization of RF-ID tags: by integrating our circuits with an organic diode, the fabrication of organic RF-ID tags comes closer.

Solution-Prepared Hybrid-Nanoparticle Dielectrics for High-Performance Low-Voltage Organic Thin-Film Transistors

2009 ◽  
Vol 1 (10) ◽  
pp. 2230-2236 ◽  
Author(s):  
Ye Gan ◽  
Qin Jia Cai ◽  
Chang Ming Li ◽  
Hong Bin Yang ◽  
Zhi Song Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Hybrid Nanoparticle

scholarly journals Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

2018 ◽  
Vol 8 (8) ◽  
pp. 1341 ◽  
Author(s):  
Rei Shiwaku ◽  
Masataka Tamura ◽  
Hiroyuki Matsui ◽  
Yasunori Takeda ◽  
Tomohide Murase ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Charge Carrier Density ◽  
Organic Thin Film ◽  
Carrier Distribution ◽  
Dual Gate

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.

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