Intrinsic Parameters for the Structure Control of Nonionic Reverse Micelles in Styrene: SAXS and Rheometry Studies

Langmuir ◽  
2011 ◽  
Vol 27 (10) ◽  
pp. 5862-5873 ◽  
Author(s):  
Lok Kumar Shrestha ◽  
Rekha Goswami Shrestha ◽  
Kenji Aramaki
Keyword(s):  
Reverse Micelles ◽  
Structure Control ◽  
Intrinsic Parameters

Infrared investigation of water encapsulated in non ionic reverse micelles

2000 ◽  
Vol 10 (PR7) ◽  
pp. Pr7-215-Pr7-218 ◽  
Author(s):  
J.-B. Brubach ◽  
A. Mermet ◽  
A. Filabozzi ◽  
P. Colavita ◽  
A. Gerschel ◽  
...  
Keyword(s):  
Reverse Micelles

Carborane–Siloxanes: Synthesis and Properties. New Possibilities for Structure Control

INEOS OPEN ◽  
2018 ◽  
Vol 1 (2) ◽  
pp. 71-84 ◽  
Author(s):  
A. A. Anisimov ◽  
◽  
A. V. Zaitsev ◽  
V. A. Ol'shevskaya ◽  
M. I. Buzin ◽  
...  
Keyword(s):  
Structure Control

Steric Inner Structure Control of Fine Particles by Spinodal Decomposition as Shape Regulation Preparation.

1999 ◽  
Vol 115 (6) ◽  
pp. 475-480
Author(s):  
Tatsuo YAMAGUCHI ◽  
Toshiaki NAKAI ◽  
Naoya ASANUMA ◽  
Sachiko ONO ◽  
Kunihiko TAKEDA
Keyword(s):  
Spinodal Decomposition ◽  
Fine Particles ◽  
Structure Control

Effects of Backside Circuit Edit on Transistor Characteristics

2007 ◽  
Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
Q.S. Wang ◽  
R. Schlangen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Intrinsic Parameters ◽  
Chip Type ◽  
Device Structures ◽  
Before And After ◽  
Silicon Device ◽  
Metal Layers

Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.

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