Directed Growth of Poly(isobenzofuran) Films by Chemical Vapor Deposition on Patterned Self-Assembled Monolayers as Templates

Langmuir ◽  
2007 ◽  
Vol 23 (5) ◽  
pp. 2483-2491 ◽  
Author(s):  
Hyun-Goo Choi ◽  
John P. Amara ◽  
Timothy M. Swager ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Directed Growth ◽  
Self Assembled

Friction Characteristics of Self-Assembled Monolayers Coated on Si-Wafer by Chemical Vapor Deposition at Nano/Micro-Scale

2005 ◽  
Author(s):  
Arvind R. Singh ◽  
Eui-Sung Yoon ◽  
Hung-Gu Han ◽  
Hosung Kong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Self Assembled Monolayers ◽  
Friction Characteristics ◽  
Micro Scale ◽  
Vapor Deposition Technique ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Si Wafer

Friction characteristics of self-assembled monolayers (SAMs) coated on Si-wafer by chemical vapor deposition technique was studied at nano-scale using AFM, and at micro-scale using micro-tribo tester. Three self-assembled monolayers, such as diphenyldichlorosilane, dimethyldichlorosilane and perfluorodecanoicacid, were tested in this work. Results showed that SAMs exhibited superior frictional property than Si-wafer. Friction in the case of Si-wafer was significantly affected by its inherent adhesion, and in the case of SAMs by their physical/chemical properties. At micro-scale, the effect of ball size on coefficient of friction of the test materials was also investigated.

scholarly journals Low Temperature Platinum Chemical Vapor Deposition on Functionalized Self-Assembled Monolayers

2020 ◽  
Author(s):  
Bryan G. Salazar ◽  
Hanwen Liu ◽  
Amy V. Walker ◽  
Lisa McElwee-White
Keyword(s):  
Vapor Deposition ◽  
Alkyl Radical ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Reaction Pathways ◽  
Self Assembled Monolayers ◽  
Organic Substrates ◽  
Radical Trap ◽  
Assembled Monolayers ◽  
Self Assembled

The reaction pathways of Pt CVD using (COD)PtMe<sub>2-x</sub>Cl<sub>x</sub> (x = 0, 1, 2) have been investigated on functionalized self-assembled monolayers (SAMs) as models for organic substrates. In the presence of 1,4-cyclohexadiene, a well-known alkyl radical trap, Pt deposition was increased by up to 10-fold creating a room-temperature effective Pt CVD process.<br><br>This article has been submitted to the Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films.

scholarly journals Low Temperature Platinum Chemical Vapor Deposition on Functionalized Self-Assembled Monolayers

2020 ◽  
Author(s):  
Bryan G. Salazar ◽  
Hanwen Liu ◽  
Amy V. Walker ◽  
Lisa McElwee-White
Keyword(s):  
Vapor Deposition ◽  
Alkyl Radical ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Reaction Pathways ◽  
Self Assembled Monolayers ◽  
Organic Substrates ◽  
Radical Trap ◽  
Assembled Monolayers ◽  
Self Assembled

The reaction pathways of Pt CVD using (COD)PtMe<sub>2-x</sub>Cl<sub>x</sub> (x = 0, 1, 2) have been investigated on functionalized self-assembled monolayers (SAMs) as models for organic substrates. In the presence of 1,4-cyclohexadiene, a well-known alkyl radical trap, Pt deposition was increased by up to 10-fold creating a room-temperature effective Pt CVD process.<br><br>This article has been submitted to the Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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