Transport Properties and Distribution of Water Molecules Confined in Hydrophobic Nanopores and Nanoslits

Langmuir ◽  
2004 ◽  
Vol 20 (16) ◽  
pp. 6921-6926 ◽  
Author(s):  
Yingchun Liu ◽  
Qi Wang ◽  
Linghong Lu
ACS Nano ◽  
2009 ◽  
Vol 4 (1) ◽  
pp. 205-210 ◽  
Author(s):  
Guangchao Zuo ◽  
Rong Shen ◽  
Shaojie Ma ◽  
Wanlin Guo

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 700 ◽  
Author(s):  
Qingyu Cao ◽  
Yidong Xu ◽  
Jianke Fang ◽  
Yufeng Song ◽  
Yao Wang ◽  
...  

The transport properties of chloride ions in cement-based materials are one of the major deterioration mechanisms for reinforced concrete (RC) structures. This paper investigates the influence of pore size and fatigue loading on the transport properties of NaCl in C-S-H nanopores using molecular dynamics (MD) simulations. Molecular models of C-S-H, NaCl solution, and C-S-H nanopores with different pore diameters are established on a microscopic scale. The distribution of the chloride ion diffusion rate and the diffusion coefficient of each particle are obtained by statistically calculating the variation of atomic displacement with time. The results indicate that the chloride ion diffusion rate perpendicular to C-S-H nanopores under fatigue loading is 4 times faster than that without fatigue loading. Moreover, the diffusion coefficient of water molecules and chloride ions in C-S-H nanopores increases under fatigue loading compared with those without fatigue loading. The diffusion coefficient of water molecules in C-S-H nanopores with a pore size of 3 nm obtained from the MD simulation is 1.794 × 10−9 m2/s, which is slightly lower than that obtained from the experiment.


2017 ◽  
Vol 418 ◽  
pp. 296-301 ◽  
Author(s):  
Muthuramalingam Prakash ◽  
Thibault Lemaire ◽  
Devis Di Tommaso ◽  
Nora de Leeuw ◽  
Marius Lewerenz ◽  
...  

2012 ◽  
Vol 531-532 ◽  
pp. 383-387 ◽  
Author(s):  
Gang Peng ◽  
Xiao Yan Yu ◽  
Ying Qiu Zhou ◽  
Guang Wang ◽  
Li Wang ◽  
...  

The desorption process for ambient atmosphere on electrical transport properties of bilayer graphene FET grown by CVD methods on SiO2/Si substrate was investigated in room temperature. With increasing the vacuum time of the device underwent, we found that the voltage of Dirac point decreased, the mobility of hole (electron) increased and the charged impurity density decreased. The results suggest that the atmospheric adsorbates (mainly oxygen and water molecules) are strongly influence the electrical transport properties of graphene FET.


1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.


Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.


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