Direct Laser Writing on Electrolessly Deposited Thin Metal Films for Applications in Micro- and Nanofluidics

Langmuir ◽  
2004 ◽  
Vol 20 (5) ◽  
pp. 1833-1837 ◽  
Author(s):  
Robert M. Lorenz ◽  
Christopher L. Kuyper ◽  
Peter B. Allen ◽  
Luke P. Lee ◽  
Daniel T. Chiu
Author(s):  
Victor P. Korolkov ◽  
Ruslan K. Nasyrov ◽  
Alexandr R. Sametov ◽  
Anatoly I. Malyshev ◽  
Dmitry A. Belousov ◽  
...  

Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


Author(s):  
Renato Grigolon Capelo ◽  
Juliana M.P. Almeida ◽  
Douglas Faza Franco ◽  
Gael Yves Poirier ◽  
Cleber Renato Mendonça ◽  
...  

2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  

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