X-ray Reflectivity Study of an Amphiphilic Hexa-peri-hexabenzocoronene at a Structured Silicon Wafer Surface

Stephan Kubowicz; Andreas F. Thünemann; Thomas M. Geue; Ullrich Pietsch; Mark D. Watson; Natalia Tchebotareva; Klaus Müllen

doi:10.1021/la035210e

X-ray Reflectivity Study of an Amphiphilic Hexa-peri-hexabenzocoronene at a Structured Silicon Wafer Surface

Langmuir ◽

10.1021/la035210e ◽

2003 ◽

Vol 19 (26) ◽

pp. 10997-10999 ◽

Cited By ~ 6

Author(s):

Stephan Kubowicz ◽

Andreas F. Thünemann ◽

Thomas M. Geue ◽

Ullrich Pietsch ◽

Mark D. Watson ◽

...

Keyword(s):

Silicon Wafer ◽

Wafer Surface ◽

X Ray ◽

Silicon Wafer Surface

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Method and mechanism of vapor phase treatment–total reflection X-ray fluorescence for trace element analysis on silicon wafer surface

Spectrochimica Acta Part B Atomic Spectroscopy ◽

10.1016/j.sab.2010.11.006 ◽

2010 ◽

Vol 65 (12) ◽

pp. 1022-1028 ◽

Cited By ~ 7

Author(s):

Hikari Takahara ◽

Yoshihiro Mori ◽

Ayako Shimazaki ◽

Yohichi Gohshi

Keyword(s):

Trace Element ◽

Silicon Wafer ◽

Vapor Phase ◽

Trace Element Analysis ◽

Total Reflection ◽

Wafer Surface ◽

Element Analysis ◽

X Ray ◽

Silicon Wafer Surface

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Study of Depth Distribution Shift of Copper on Silicon Wafer Surface Using Total Reflection X-Ray Fluorescence Spectrometry.

Analytical Sciences ◽

10.2116/analsci.12.277 ◽

1996 ◽

Vol 12 (2) ◽

pp. 277-279 ◽

Cited By ~ 8

Author(s):

Yoshihiro MORI ◽

Kengo SHIMANOE

Keyword(s):

Silicon Wafer ◽

Depth Distribution ◽

Total Reflection ◽

Fluorescence Spectrometry ◽

Wafer Surface ◽

X Ray ◽

Silicon Wafer Surface

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Vapor phase treatment–total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface

Spectrochimica Acta Part B Atomic Spectroscopy ◽

10.1016/j.sab.2013.10.006 ◽

2013 ◽

Vol 90 ◽

pp. 72-82 ◽

Cited By ~ 4

Author(s):

Hikari Takahara ◽

Yoshihiro Mori ◽

Harumi Shibata ◽

Ayako Shimazaki ◽

Mohammad B. Shabani ◽

...

Keyword(s):

Silicon Wafer ◽

Vapor Phase ◽

Elemental Analysis ◽

Total Reflection ◽

Wafer Surface ◽

Trace Elemental Analysis ◽

X Ray ◽

Silicon Wafer Surface ◽

Trace Elemental

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Detection of unknown localized contamination on silicon wafer surface by sweeping-total reflection X-ray fluorescence analysis

Spectrochimica Acta Part B Atomic Spectroscopy ◽

10.1016/j.sab.2004.05.022 ◽

2004 ◽

Vol 59 (8) ◽

pp. 1277-1282 ◽

Cited By ~ 9

Author(s):

Yoshihiro Mori ◽

Kenichi Uemura ◽

Hiroshi Kohno ◽

Motoyuki Yamagami ◽

Takashi Yamada ◽

...

Keyword(s):

Silicon Wafer ◽

Fluorescence Analysis ◽

Total Reflection ◽

Wafer Surface ◽

X Ray ◽

Silicon Wafer Surface

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Impact of Thermal Processing on Silicon Wafer Surface Roughness

ECS Meeting Abstracts ◽

10.1149/ma2008-02/33/2192 ◽

2008 ◽

Keyword(s):

Surface Roughness ◽

Silicon Wafer ◽

Thermal Processing ◽

Wafer Surface ◽

Silicon Wafer Surface

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Silicon wafer surface passivation by low-temperature oxidation prior to ultraviolet radiation for photoconductive decay measurement

Journal of Applied Physics ◽

10.1063/1.373464 ◽

2000 ◽

Vol 87 (11) ◽

pp. 7845-7847 ◽

Cited By ~ 5

Author(s):

W. P. Lee ◽

Y. L. Khong

Keyword(s):

Low Temperature ◽

Ultraviolet Radiation ◽

Silicon Wafer ◽

Surface Passivation ◽

Wafer Surface ◽

Low Temperature Oxidation ◽

Temperature Oxidation ◽

Photoconductive Decay ◽

Silicon Wafer Surface ◽

Decay Measurement

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Trace determination of iron on a silicon wafer surface by silicon direct bonding and neutron activation analysis

Journal of Radioanalytical and Nuclear Chemistry ◽

10.1007/bf02060375 ◽

1996 ◽

Vol 203 (1) ◽

pp. 3-9 ◽

Cited By ~ 3

Author(s):

T. Shigematsu ◽

M. Polasek ◽

H. Yonezawa

Keyword(s):

Neutron Activation Analysis ◽

Activation Analysis ◽

Neutron Activation ◽

Silicon Wafer ◽

Wafer Surface ◽

Trace Determination ◽

Silicon Wafer Surface

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Study on In-Process Measurement of Silicon Wafer Surface Defects by Laser Scattered Defect Pattern. 2nd Report. Fast Defect Measurement Method using LSDP.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.68.962 ◽

2002 ◽

Vol 68 (7) ◽

pp. 962-966 ◽

Cited By ~ 1

Author(s):

Satoru TAKAHASHI ◽

Takashi MIYOSHI ◽

Yasuhiro TAKAYA ◽

Yasufumi TATSUNO

Keyword(s):

Silicon Wafer ◽

Measurement Method ◽

Surface Defects ◽

Wafer Surface ◽

Process Measurement ◽

Silicon Wafer Surface ◽

Defect Pattern

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Influence of Negative Ion Impurities on the SPV Signal Intensity from an N-type Silicon Wafer Surface

ECS Meeting Abstracts ◽

10.1149/ma2005-02/11/435 ◽

2005 ◽

Keyword(s):

Silicon Wafer ◽

Signal Intensity ◽

Negative Ion ◽

Wafer Surface ◽

Type Silicon ◽

Silicon Wafer Surface

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The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

MRS Proceedings ◽

10.1557/proc-259-405 ◽

1992 ◽

Vol 259 ◽

Cited By ~ 2

Author(s):

Y. Ishimaru ◽

M. Yoshiki ◽

T. Hatanaka

Keyword(s):

Silicon Wafer ◽

Silicon Surface ◽

Dopant Concentration ◽

Oxide Thickness ◽

Native Oxide ◽

Wafer Surface ◽

Oxide Growth ◽

X Ray ◽

Silicon Bulk ◽

P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

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