Controlled Growth of Silicon Dioxide from “Nanoholes” in Silicon-Supported Tris(trimethylsiloxy)silyl Monolayers:  Rational Control of Surface Roughness at the Nanometer Length Scale

Langmuir ◽  
2003 ◽  
Vol 19 (6) ◽  
pp. 2449-2457 ◽  
Author(s):  
Xinqiao Jia ◽  
Thomas J. McCarthy
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Length Scale ◽  
Controlled Growth ◽  
Rational Control ◽  
Nanometer Length Scale

Particle detachment due to wheel rotation

2020 ◽  
pp. 1420326X2093516
Author(s):  
Jinwei Song ◽  
Hua Qian ◽  
Xiaohong Zheng
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Adhesion Force ◽  
Aluminium Oxide ◽  
Theoretical Models ◽  
Wheel Speed ◽  
Spherical Particles ◽  
Wheel Surface ◽  
Particle Detachment ◽  
Oxide Particles

Particle detachment induced by a rotating wheel was investigated theoretically and experimentally. The developed theoretical models were used to reveal how the particle detaches from a wheel surface to the surrounding air. The corresponding experiments were carried out to validate proposed models. Two groups of spherical particles were considered, i.e. silicon dioxide and aluminium oxide particles. Different forces and force moments acting on individual particles were analysed. The criteria for the rolling detachment of particles were considered. The detachment diameters under various conditions were calculated. The results show that the particle detachment was dominated by the removal and resistant forces acting on particles, including the gravity force, adhesion force, hydrodynamic force and centrifugal force. Different relevant parameters can affect particle detachment through these forces, including surface roughness, wheel speed, particle size and properties. A higher wheel speed, larger particle sizes and higher wheel surface roughness were shown to have a conducive influence on particle detachment. The resistant and removal force moments could be affected by the particle properties at the same time; therefore, the detachment diameters of the aluminium oxide particles are similar to those of silicon dioxide. This study can contribute towards the estimation of particle emissions from vehicles.

Sliding Induced Nanocrystals on Si

2005 ◽  
Author(s):  
Srinivas Guruzu ◽  
Hong Liang
Keyword(s):  
Atomic Force Microscope ◽  
Surface Characterization ◽  
Applied Load ◽  
Length Scale ◽  
Sliding Surface ◽  
Si Substrate ◽  
Atomic Force ◽  
Test Conditions ◽  
Boundary Properties ◽  
Nanometer Length Scale

Our previous research has shown that Ga pin sliding again Si induces nanometer length scale crystals. In this research, we continued on with an In pin with one stroke slides on Si substrate. Applied load was varied for sliding Surface characterization was conducted using an atomic force microscope. Results showed that triangular-shaped nanocrystals were formed on Si surfaces. The height and side length of these nanocrystals depend on test conditions. In this paper, we report our findings in crystal structures and boundary properties.

Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

1992 ◽  
Vol 282 ◽  
Author(s):  
S. Veprek ◽  
Ch. Wang ◽  
G. Ratz
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Silicon Surface ◽  
Etch Rate ◽  
Hydrogen Plasma ◽  
Oxygen Removal ◽  
Surface Cleaning ◽  
Optimum Conditions ◽  
Degree Of Anisotropy ◽  
Oxygen Impurities

ABSTRACTWe present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

Gram Level Synthesis of Lead-Free Solder in the Nanometer Length Scale Obtained from Tin and Silver Compounds Using Silicone Oil

Langmuir ◽  
2008 ◽  
Vol 24 (16) ◽  
pp. 8991-8997 ◽  
Author(s):  
Surojit Pande ◽  
Achintya Kumar Sarkar ◽  
Mrinmoyee Basu ◽  
Subhra Jana ◽  
Arun Kumar Sinha ◽  
...  
Keyword(s):  
Silicone Oil ◽  
Lead Free ◽  
Length Scale ◽  
Lead Free Solder ◽  
Nanometer Length Scale ◽  
Free Solder ◽  
Silver Compounds

scholarly journals Patterning at the 10 nanometer length scale using a strongly segregating block copolymer thin film and vapor phase infiltration of inorganic precursors

Nanoscale ◽  
2016 ◽  
Vol 8 (22) ◽  
pp. 11595-11601 ◽  
Author(s):  
Jonathan W. Choi ◽  
Zhaodong Li ◽  
Charles T. Black ◽  
Daniel P. Sweat ◽  
Xudong Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Block Copolymer ◽  
Vapor Phase ◽  
Length Scale ◽  
Nanometer Length Scale ◽  
Inorganic Precursors

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

scholarly journals A Novel Multi-Scale Particle Morphology Descriptor with the Application of SPHERICAL Harmonics

Materials ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3286
Author(s):  
Wei Xiong ◽  
Jianfeng Wang ◽  
Zhuang Cheng
Keyword(s):  
Surface Roughness ◽  
Scale Effect ◽  
Scale Effects ◽  
Particle Surface ◽  
Relative Length ◽  
Particle Morphology ◽  
Length Scale ◽  
Multi Scale ◽  
Rate Of Increase ◽  
Macro Scale

Particle morphology is of great significance to the grain- and macro-scale behaviors of granular soils. Most existing traditional morphology descriptors have three perennial limitations, i.e., dissensus of definition, inter-scale effect, and surface roughness heterogeneity, which limit the accurate representation of particle morphology. The inter-scale effect refers to the inaccurate representation of the morphological features at the target relative length scale (RLS, i.e., length scale with respective to particle size) caused by the inclusion of additional morphological details existing at other RLS. To effectively eliminate the inter-scale effect and reflect surface roughness heterogeneity, a novel spherical harmonic-based multi-scale morphology descriptor Rinc is proposed to depict the incremental morphology variation (IMV) at different RLS. The following conclusions were drawn: (1) the IMV at each RLS decreases with decreasing RLS while the corresponding particle surface is, in general, getting rougher; (2) artificial neural network (ANN)-based mean impact values (MIVs) of Rinc at different RLS are calculated and the results prove the effective elimination of inter-scale effects by using Rinc; (3) Rinc shows a positive correlation with the rate of increase of surface area RSA at all RLS; (4) Rinc can be utilized to quantify the irregularity and roughness; (5) the surface morphology of a given particle shows different morphology variation in different sections, as well as different variation trends at different RLS. With the capability of eliminating the existing limitations of traditional morphology descriptors, the novel multi-scale descriptor proposed in this paper is very suitable for acting as a morphological gene to represent the multi-scale feature of particle morphology.

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