Charge Transfer through Thin Layers of Water Investigated by STM, AFM, and QCM

Langmuir ◽  
2002 ◽  
Vol 18 (7) ◽  
pp. 2780-2784 ◽  
Author(s):  
Moon-Bong Song ◽  
Jai-Man Jang ◽  
Sang-Eun Bae ◽  
Chi-Woo Lee
Keyword(s):  
Charge Transfer ◽  
Thin Layers

Charge transfer hopping mechanism in thin layers of chalcogenide system (As2Se3)100-xBix

2020 ◽  
Author(s):  
Gennadiy Bordovskii ◽  
Nadezhda Anisimova ◽  
Gennady Grabko
Keyword(s):  
Charge Transfer ◽  
Thin Layers ◽  
Hopping Mechanism

Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

2010 ◽  
Vol 44 (8) ◽  
pp. 1004-1007 ◽  
Author(s):  
N. I. Anisimova ◽  
V. A. Bordovsky ◽  
G. I. Grabko ◽  
R. A. Castro
Keyword(s):  
Charge Transfer ◽  
Thin Layers ◽  
Arsenic Triselenide

scholarly journals Перенос заряда в планарных структурах на основе халькогенидной системы (As-=SUB=-2-=/SUB=-Se-=SUB=-3-=/SUB=-)-=SUB=-100-x-=/SUB=-Bi-=SUB=-x-=/SUB=-

2019 ◽  
Vol 53 (12) ◽  
pp. 1664
Author(s):  
Р.А. Кастро ◽  
С.Д. Ханин ◽  
А.П. Смирнов ◽  
А.А. Кононов
Keyword(s):  
Charge Transfer ◽  
Disordered Systems ◽  
Thin Layers ◽  
Localized States ◽  
Cbh Model ◽  
Thermally Activated ◽  
Transfer Processes ◽  
Density Of Localized States ◽  
Increasing Temperature ◽  
Thermally Activated Process

AbstractThe results of investigating charge-transfer processes in thin layers of a vitreous system (As_2Se_3)_100 – _ x Bi_ x are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies E _1 = 0.12 ± 0.01 eV and E _2 = 0.23 ± 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states ( N ), the hopping length ( R _ω), and the largest height of the potential barrier ( W _ M ).

Hopping Mechanism of Charge Transfer in the Thin Layers of a Ge28.5Рb15S56.5 Vitreous System

2018 ◽  
Vol 44 (5) ◽  
pp. 398-401
Author(s):  
R. A. Kastro ◽  
S. D. Khanin ◽  
N. I. Anisimova ◽  
G. I. Grabko
Keyword(s):  
Charge Transfer ◽  
Thin Layers ◽  
Hopping Mechanism ◽  
Vitreous System

p-Type SnO thin layers on n-type SnS2 nanosheets with enriched surface defects and embedded charge transfer for lithium ion batteries

2017 ◽  
Vol 5 (2) ◽  
pp. 512-518 ◽  
Author(s):  
Yiqiong Zhang ◽  
Zhaoling Ma ◽  
Dongdong Liu ◽  
Shuo Dou ◽  
Jianmin Ma ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Plasma Treatment ◽  
Lithium Ion Batteries ◽  
Surface Defects ◽  
Lithium Ion ◽  
Thin Layers ◽  
Li Ion Batteries ◽  
Li Ion ◽  
P Type

We constructed defective heterointerfaces of p-SnO on n-SnS2 nanosheets by plasma treatment to improve the anode performance in Li-ion batteries.

Immunoferritin localization of intracellular antigens in positively stained frozen sections

1978 ◽  
Vol 36 (2) ◽  
pp. 168-169
Author(s):  
K. T. Tokuyasu
Keyword(s):  
Surface Tension ◽  
Water Surface ◽  
Thin Layers ◽  
The Other ◽  
Positive Staining ◽  
Frozen Sections ◽  
The Past ◽  
Ultrathin Frozen Sections ◽  
Definition Of

During the past investigations of immunoferritin localization of intracellular antigens in ultrathin frozen sections, we found that the degree of negative staining required to delineate u1trastructural details was often too dense for the recognition of ferritin particles. The quality of positive staining of ultrathin frozen sections, on the other hand, has generally been far inferior to that attainable in conventional plastic embedded sections, particularly in the definition of membranes. As we discussed before, a main cause of this difficulty seemed to be the vulnerability of frozen sections to the damaging effects of air-water surface tension at the time of drying of the sections.Indeed, we found that the quality of positive staining is greatly improved when positively stained frozen sections are protected against the effects of surface tension by embedding them in thin layers of mechanically stable materials at the time of drying (unpublished).

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Sign in / Sign up

Export Citation Format

Share Document