Construction of Multilayer Thin Films Containing Avidin by a Layer-by-Layer Deposition of Avidin and Poly(anion)s

Langmuir ◽  
2000 ◽  
Vol 16 (15) ◽  
pp. 6306-6311 ◽  
Author(s):  
Jun-ichi Anzai ◽  
Tomonori Hoshi ◽  
Nobuyuki Nakamura
2020 ◽  
Vol 12 (7) ◽  
pp. 890-900
Author(s):  
Hua Wei ◽  
Hua Zhang ◽  
Yang Zhou ◽  
Zongbao Wang ◽  
Rong Wang ◽  
...  

This study demonstrated the feasibility of polymer brushes-modified plate substrate as template to construct multilayer thin films via layer-by-layer hydrogen bonded assembly. The anchored chains via controlled surface-initiated atom transfer radical polymerization (SI-ATRP). The anchored poly(4-vinylpyridine) brushes functions as a multivalent H-acceptor to regulate the following hydrogen bonded assembly with H-donors to construct multilayer thin films via layer-by-layer deposition technique. The growth mechanism and film natures of multilayer films mediated by hydrogen bonded assembly from a polymer brushes-grafted surface were fully investigated.


2010 ◽  
Vol 11 ◽  
pp. 1-6 ◽  
Author(s):  
Sujira Promnimit ◽  
Joydeep Dutta

In this work, we report the directed self organization of multilayer thin film devices with colloidal nanoparticles through Layer-by-Layer (LbL) technique [1]. Self-organization of nanoparticles into assemblies to create novel nanostructures is getting increasing research attention in microelectronics, medical, energy and environmental applications. Directed self-organization of nanoparticles [2] into multilayer thin films were achieved by LbL growth through the interaction of oppositely charged of colloidal nanoparticles on substrates of any kind and shapes. Multilayer thin film devices were fabricated using multilayers of gold (conducting) nanoparticles separated by a dielectric nanoparticulate layer of zinc sulphide. The thin films obtained have been studied extensively and the changes in surface morphology, the optical absorption characteristics, thickness, uniformity, adhesion, and conduction behavior are reported. Current voltage (I-V) characteristics of multilayer devices with an increasing number of deposition cycles show an initial current blockade until an onset voltage value, which increases linearly upon the additional layers stacked in devices [3]. A conductive behavior of the device was observed upon exceeding the onset voltage. Moreover, I-V behavior showed that the conduction onset voltage increases linearly depending on the numbers of layers in the final device controlled by the deposition cycles. Systematic I-V characteristics in the forward and reverse biased conditions demonstrated rectifying behaviors in the onset of conduction voltage which makes these films attractive for future electronic device applications.


Nanoscale ◽  
2015 ◽  
Vol 7 (42) ◽  
pp. 17685-17692 ◽  
Author(s):  
Veerabhadrarao Kaliginedi ◽  
Hiroaki Ozawa ◽  
Akiyoshi Kuzume ◽  
Sivarajakumar Maharajan ◽  
Ilya V. Pobelov ◽  
...  

Reporting the first study on the electrochemical energy storage application of surface immobilized ruthenium-complex multilayers.


2009 ◽  
Author(s):  
Petronela Prepelita ◽  
R. Medianu ◽  
F. Garoi ◽  
A. Moldovan ◽  
A. M. Vlaicu

1992 ◽  
Vol 275 ◽  
Author(s):  
K. Yoshikawa ◽  
N. Sasaki

ABSTRACTUsing in-situ reflection high-energy electron diffraction (RHEED), we studied the growth of Bi-Sr-Ca-Cu-O (BSCCO) thin films prepared by reactive evaporation using layer-by-layer deposition. Bi2Sr2CaCu2Ox(2212) tends to be grown three-dimensionally if it is grown directly on (100) SrTiO3, in contrast to Bi2Sr2CuOx(2201) which is easily grown two-dimensionally on SrTiO3. Two-dimensional 2212 growth can be realized, if a buffer layer of 2201 is deposited on (100) SrTiO3 and growth interruption is utilized after SrO layer deposition. A buffer layer of only two 2201 unit cells improved the surface crystallinity of the substrate for the epitaxial growth of 2212. Growth interruption for two minutes after the 2nd SrO layer in the half unit cell is necessary to keep two-dimensional layered growth. The resulting Tc (zero) is 76 K and Jc (at 4.2 K) is 1.5 × 106 (A/cm2) with these epitaxial films.


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