Chemical Vapor Surface Modification of Porous Glass with Fluoroalkyl-Functional Silanes. 1. Characterization of the Molecular Layer

Langmuir ◽  
1994 ◽  
Vol 10 (5) ◽  
pp. 1472-1476 ◽  
Author(s):  
Hiroaki Tada ◽  
Hirotsugu Nagayama
Keyword(s):  
Surface Modification ◽  
Porous Glass ◽  
Molecular Layer ◽  
Chemical Vapor

Organometallic chemical vapor deposition and characterization of indium phosphide nanocrystals in Vycor porous glass

1993 ◽  
Vol 63 (24) ◽  
pp. 3324-3326 ◽  
Author(s):  
D. Greg Hendershot ◽  
D. Kurt Gaskill ◽  
Brian L. Justus ◽  
Mohammad Fatemi ◽  
Alan D. Berry
Keyword(s):  
Chemical Vapor Deposition ◽  
Indium Phosphide ◽  
Porous Glass ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organometallic Chemical Vapor Deposition

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Characterization of interfaces in CVD-coated nicalon fiber-reinforced SiC

1989 ◽  
Vol 47 ◽  
pp. 556-557
Author(s):  
K.L. More ◽  
R.A. Lowden
Keyword(s):  
Mechanical Properties ◽  
Fracture Toughness ◽  
Chemical Vapor ◽  
Chemical Vapor Infiltration ◽  
Frictional Stress ◽  
Fiber Reinforced ◽  
Pull Out ◽  
Carbon Coated ◽  
Fiber Matrix

The mechanical properties of fiber-reinforced composites are directly related to the nature of the fiber-matrix bond. Fracture toughness is improved when debonding, crack deflection, and fiber pull-out occur which in turn depend on a weak interfacial bond. The interfacial characteristics of fiber-reinforced ceramics can be altered by applying thin coatings to the fibers prior to composite fabrication. In a previous study, Lowden and co-workers coated Nicalon fibers (Nippon Carbon Company) with silicon and carbon prior to chemical vapor infiltration with SiC and determined the influence of interfacial frictional stress on fracture phenomena. They found that the silicon-coated Nicalon fiber-reinforced SiC had low flexure strengths and brittle fracture whereas the composites containing carbon coated fibers exhibited improved strength and fracture toughness. In this study, coatings of boron or BN were applied to Nicalon fibers via chemical vapor deposition (CVD) and the fibers were subsequently incorporated in a SiC matrix. The fiber-matrix interfaces were characterized using transmission and scanning electron microscopy (TEM and SEM). Mechanical properties were determined and compared to those obtained for uncoated Nicalon fiber-reinforced SiC.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3
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