Real-time monitoring of electrochemical dynamics by submillisecond time-resolved surface-enhanced infrared attenuated-total-reflection spectroscopy

Langmuir ◽  
1994 ◽  
Vol 10 (3) ◽  
pp. 640-642 ◽  
Author(s):  
Masatoshi Osawa ◽  
Katsumasa Yoshii ◽  
Ken-ichi Ataka ◽  
Takao Yotsuyanagi
Keyword(s):  
Real Time ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy ◽  
Real Time Monitoring ◽  
Time Resolved ◽  
Surface Enhanced

Nucleation Mechanism of Microcrystalline Silicon Studied by Real Time Spectroscopic Ellipsometry and Infrared Spectroscopy

2000 ◽  
Vol 609 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Yasutake Toyoshima ◽  
Michio Kondo ◽  
Akihisa Matsuda
Keyword(s):  
Plasma Treatment ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Nucleation Mechanism ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy ◽  
Microcrystalline Silicon ◽  
Strained Si ◽  
Initial Layers

ABSTRACTWe have characterized a-Si:H initial layers for μc-Si:H nucleation by real time spectroscopic ellipsometry (SE) and infrared attenuated total reflection spectroscopy (ATR) to investigate the μc-Si:H formation mechanism. By performing Ar plasma treatment of a-Si:H layers, we confirmed a presence of a 2 monolayer thick sub-surface in a-Si:H layers. In the a-Si:H sub-surface that leads to the μc-Si:H nucleation, an important peak at ∼1937 cm−1 assigned to the SiHn complex was found in the ATR spectra. From H2 plasma treatment experiments, we proposed that this SiHn complex is formed by H insertion into strained Si-Si bonds. The SiHn complex formed in the a-Si:H sub-surface showed a clear relationship with the μc-Si:H nucleation. From these results, we conclude that the μc-Si:H nucleation occurs by the formation of the chemically active and flexible SiHn complexes in the 2 monolayer thick a-Si:H sub-surface.

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