Four Layer Complexation Model for Ion Adsorption at Electrolyte/Oxide Interface: Theoretical Foundations

Langmuir ◽  
1995 ◽  
Vol 11 (8) ◽  
pp. 3199-3210 ◽  
Author(s):  
Robert Charmas ◽  
Wojciech Piasecki ◽  
Wladyslaw Rudzinski
Keyword(s):  
Ion Adsorption ◽  
Oxide Interface ◽  
Theoretical Foundations

scholarly journals On the Nature of the Energetic Surface Heterogeneity in Ion Adsorption at an Electrolyte/Oxide Interface. Theoretical Studies of the Correlations between Binding-to-Surface Energies of Various Surface Complexes

1996 ◽  
Vol 14 (1) ◽  
pp. 25-38 ◽  
Author(s):  
Wladyslaw Rudziński ◽  
Robert Charmas ◽  
Wojciech Piasecki
Keyword(s):  
Surface Heterogeneity ◽  
Ion Adsorption ◽  
Surface Oxygen ◽  
Oxide Interface ◽  
Surface Complexes ◽  
Surface Energies ◽  
Outermost Surface ◽  
Energetic Heterogeneity ◽  
Total Lack ◽  
Oxide Electrolyte

When a metal oxide is brought into contact with an electrolyte, the outermost surface oxygens adsorb one or two protons, a cation or an aggregate composed of two protons and an anion. In this way, various surface complexes are formed. The actual surfaces are, as a rule, geometrically distorted. This causes a variation of the binding-to-surface energy from one surface oxygen to another for each of these complexes. This energetic heterogeneity of the actual oxide surfaces strongly affects the adsorption of ions within the electrical double layer formed at the oxide/electrolyte interface. The way in which the surface heterogeneity affects the adsorption of ions depends on the correlations between the binding-to-surface energies of the various surface complexes. To date, two extreme models have been considered by us; one assuming the existence of very high correlations, and the other one assuming a total lack of correlation between binding-to-surface energies in going from one surface oxygen to another. This paper presents a theoretical study of ion adsorption based on the assumption of a partial correlation between the binding-to-surface energies.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

HREM observation of NiO growth on submicron spheres of pure nickel

1989 ◽  
Vol 47 ◽  
pp. 548-549
Author(s):  
C.M. Teng ◽  
T.F. Kelly ◽  
J.P. Zhang ◽  
H.M. Lin ◽  
Y.W. Kim
Keyword(s):  
Nickel Oxide ◽  
Grain Boundaries ◽  
Pure Nickel ◽  
Submicron Particles ◽  
Crystal Formation ◽  
Nickel Wire ◽  
Liquid Droplets ◽  
Oxide Interface ◽  
Nickel Chromium ◽  
Chromium Alloys

Spherical submicron particles of materials produced by electrohydrodynamic (EHD) atomization have been used to study a variety of materials processes including nucleation of alternative crystallization phases in iron-nickel and nickel-chromium alloys, amorphous solidification in submicron droplets of pure metals, and quasi-crystal formation in nickel-chromium alloys. Some experiments on pure nickel, nickel oxide single crystals, the nickel/nickel(II) oxide interface, and grain boundaries in nickel monoxide have been performed by STEM. For these latter studies, HREM is the most direct approach to obtain particle crystal structures at the atomic level. Grain boundaries in nickel oxide have also been investigated by HREM. In this paper, we present preliminary results of HREM observations of NiO growth on submicron spheres of pure nickel.Small particles of pure nickel were prepared by EHD atomization. For the study of pure nickel, 0.5 mm diameter pure nickel wire (99.9975%) is sprayed directly in the EHD process. The liquid droplets solidify in free-flight through a vacuum chamber operated at about 10-7 torr.

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