Photocatalytically Prepared Metal Nanocluster–Oxide Semiconductor–Carbon Nanocomposite Electrodes for Driving Multielectron Transfer

2013 ◽  
Vol 4 (20) ◽  
pp. 3468-3478 ◽  
Author(s):  
Krishnan Rajeshwar ◽  
Csaba Janaky ◽  
Wen-Yuan Lin ◽  
David A. Roberts ◽  
Wesley Wampler
2013 ◽  
Vol 102 ◽  
pp. 240-245 ◽  
Author(s):  
Yunseok Jang ◽  
Jeongdai Jo ◽  
Young-Man Choi ◽  
Inyoung Kim ◽  
Seung-Hyun Lee ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yiming Chen ◽  
Haiyan Zhang ◽  
Yuting Chen ◽  
Jiapeng Lin

Carbon nanocomposite electrodes were prepared by adding carbon nanotubes (CNTs) into carbon black as counterelectrodes of dye-sensitized solar cells(DSSCs). The morphology and structure of carbon nanocomposite electrodes were studied by scanning electron microscopy. The influence of CNTs on the electrochemical performance of carbon nanocomposite electrodes is investigated by cyclic voltammetry and electrochemical impedance spectroscopy. Carbon nano composite electrodes with CNTs exhibit a highly interconnected network structure with high electrical conductivity and good catalytic activity. The influence of different CNTs content in carbon nanocomposite electrodes on the open-circuit voltage, short-circuit current, and filling factor of DSSCs is also investigated. DSSCs with 10% CNTs content exhibit the best photovoltaic performance in our experiments.


2020 ◽  
Vol 32 ◽  
pp. 101798
Author(s):  
Allan Daraghmeh ◽  
Shahzad Hussain ◽  
Atta Ul Haq ◽  
Iyad Saadeddin ◽  
Llorenç Servera ◽  
...  

2008 ◽  
Vol 2008 (6) ◽  
pp. 878-882 ◽  
Author(s):  
Du-Hee Lee ◽  
Jae-Gwan Park ◽  
Kyoung Jin Choi ◽  
Heon-Jin Choi ◽  
Dong-Wan Kim

Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


2017 ◽  
Vol 18 (2) ◽  
pp. 302-322
Author(s):  
Fajar Hardoyono

Abstract: The development of aromatic sensor array instrument for the detection of alcohol in perfume. The research was conducted by developing the sensor array using 8 sensors made of metal oxide semiconductor. The sensor types used in this study consisted of TGS 813, TGS 822, TGS 2600, TGS 826, TGS 2611, TGS 2620, TGS 2612 and TGS 2602. Response patterns of 8 sensors formed a sensor array pattern used to detect the aroma of 2 groups of samples perfume made from the essential oil of ginger. The first sample group is pure ginger atsiri oil without mixed alcohol. The second sample group was made from the ginger atsiri oil mixed with alcohol with a level of 0.02 M. The results of the data recording show that the developed instrument is able to dissect the first sample group with the second sample group. Data analysis using principal component analysis method (PCA shows that the instrument is able to distinguish the contaminated alcohol perfume group 0.2 M with the alcohol-free perfume group with 100% accuracy. Keywords: Sensor Aroma, Perfume.


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