The Origin of Slow Carrier Transport in BiVO4 Thin Film Photoanodes: A Time-Resolved Microwave Conductivity Study

2013 ◽  
Vol 4 (16) ◽  
pp. 2752-2757 ◽  
Author(s):  
Fatwa F. Abdi ◽  
Tom J. Savenije ◽  
Matthias M. May ◽  
Bernard Dam ◽  
Roel van de Krol
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Microwave Conductivity ◽  
Time Resolved

Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion

2016 ◽  
Vol 16 (4) ◽  
pp. 3388-3393
Author(s):  
Kohei Matsubara ◽  
Kentaro Abe ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Transport Process ◽  
Carrier Transport ◽  
Second Harmonic ◽  
Potential Drop ◽  
Transport Processes ◽  
Time Resolved ◽  
Single Crystalline ◽  
Injection Process

Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory is appropriate to interpret the carrier transport in anisotropic TIPS pentacene thin film. TRM-SHG method is a facile and effective way to directly visualize transport process in anisotropic materials and to evaluate injection and transport processes simultaneously.

Flash-photolysis time-resolved microwave conductivity of a poly(3-hexylthiophene) thin film

2001 ◽  
Vol 121 (1-3) ◽  
pp. 1451-1452 ◽  
Author(s):  
G. Dicker ◽  
B. Wegewijs ◽  
J. Piris ◽  
T.J. Savenije ◽  
B.-H. Huisman ◽  
...  
Keyword(s):  
Thin Film ◽  
Flash Photolysis ◽  
Microwave Conductivity ◽  
Time Resolved

Optoelektronic Properties of CuGaSe2 Thin Films Studied by Time-resolved Microwave Conductivity

2003 ◽  
Vol 763 ◽  
Author(s):  
A. Meeder ◽  
D. Fuertes Marrón ◽  
M. Ch. Lux-Steiner ◽  
M. Kunst
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Charge Carrier Transport ◽  
Back Side ◽  
Defect Model ◽  
Microwave Conductivity ◽  
Time Resolved ◽  
Layer Defect

AbstractApplying the (contactless) time-resolved microwave conductivity technique (TRMC) to CVD- and PVD-grown device grade CuGaSe2 thin films experimental data of hole mobility and lifetime are obtained. TRMC data of stoichiometric and Gallium-rich, front and back side illuminated thin films are presented. In the Gallium-rich samples an extended decay over several orders of magnitude is observed. In the stoichiometric samples the majority of excess carriers decays nearly instantaneously. Differences in charge carrier transport at the front and the back side are discussed in the framework of a two layer defect model, previously reported in such absorber layers.

Straight, bent and twisted intramolecular charge separated states as seen by time-resolved microwave conductivity (TRMC)

1993 ◽  
Vol 65 (8) ◽  
pp. 1723-1728 ◽  
Author(s):  
J. M. Warman ◽  
S. A. Jonker ◽  
W. Schuddeboom ◽  
M. P. de Haas ◽  
M. N. Paddon-Row ◽  
...  
Keyword(s):  
Microwave Conductivity ◽  
Time Resolved

Time-resolved Photoconductivity as a Probe of Carrier Transport in Microcrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Steve Reynolds
Keyword(s):  
Density Of States ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Film Growth ◽  
Hole Mobility ◽  
Transport Parameters ◽  
Microcrystalline Silicon ◽  
Time Resolved ◽  
Transient Photoconductivity ◽  
Transport Measurements

AbstractThe use of transient photoconductivity techniques in the investigation of carrier transport in microcrystalline silicon is described. Results are presented which highlight variations in transport parameters such as carrier mobility and density of states with structure composition. Hole mobility is significantly enhanced by crystalline content in the film of 10% or less. The density of states inferred from transport measurements parallel to and at right angles to the direction of film growth differ somewhat, suggesting that transport may be anisotropic.

Identification of marcasite in pyrite FeS2 thin films and the films' carrier transport characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81394-81399 ◽  
Author(s):  
Juran Kim ◽  
Gee Yeong Kim ◽  
Hankyoul Moon ◽  
Seokhyun Yoon ◽  
Il Wan Seo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Transport ◽  
Sulfurization Temperature ◽  
Light Absorber

400 °C is optimal sulfurization temperature for pure pyrite FeS2 thin film, expecting better performance as light-absorber.

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