scholarly journals Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina

2012 ◽  
Vol 3 (15) ◽  
pp. 1974-1979 ◽  
Author(s):  
James E. Johns ◽  
Hunter J. Karmel ◽  
Justice M. P. Alaboson ◽  
Mark C. Hersam
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Before And After

Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Flat Band ◽  
Interface Reactions ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.

scholarly journals Toward Enhanced Humidity Stability of Triboelectric Mechanical Sensors via Atomic Layer Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1795
Author(s):  
Wook Kim ◽  
Sumaira Yasmeen ◽  
Chi Thang Nguyen ◽  
Han-Bo-Ram Lee ◽  
Dukhyun Choi
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ptfe Film ◽  
Humidity Resistance ◽  
Layer Deposition ◽  
Before And After ◽  
Mechanical Sensors ◽  
Novel Design

Humid conditions can disrupt the triboelectric signal generation and reduce the accuracy of triboelectric mechanical sensors. This study demonstrates a novel design approach using atomic layer deposition (ALD) to enhance the humidity resistance of triboelectric mechanical sensors. Titanium oxide (TiOx) was deposited on polytetrafluoroethylene (PTFE) film as a moisture passivation layer. To determine the effective ALD process cycle, the TiOx layer was deposited with 100 to 2000 process cycles. The triboelectric behavior and surface chemical bonding states were analyzed before and after moisture exposure. The ALD-TiOx-deposited PTFE showed three times greater humidity stability than pristine PTFE film. Based on the characterization of TiOx on PTFE film, the passivation mechanism was proposed, and it was related to the role of the oxygen-deficient sites in the TiOx layer. This study could provide a novel way to design stable triboelectric mechanical sensors in highly humid environments.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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