Plasmon-Controlled Fluorescence: Beyond the Intensity Enhancement

2012 ◽  
Vol 3 (2) ◽  
pp. 191-202 ◽  
Author(s):  
Tian Ming ◽  
Huanjun Chen ◽  
Ruibin Jiang ◽  
Qian Li ◽  
Jianfang Wang
Keyword(s):  
Intensity Enhancement ◽  
Plasmon Controlled Fluorescence

Effect of GeO2 additive on fluorescence intensity enhancement in bismuth-doped silica glass

2007 ◽  
Vol 22 (3) ◽  
pp. 565-568 ◽  
Author(s):  
Yasushi Fujimoto ◽  
Yuki Hirata ◽  
Yoshiyuki Kuwada ◽  
Takahiro Sato ◽  
Masahiro Nakatsuka
Keyword(s):  
Fluorescence Intensity ◽  
Silica Glass ◽  
Experimental Results ◽  
Full Width ◽  
Half Maximum ◽  
Intensity Enhancement ◽  
Luminescent Centers

We observed the enhancement of fluorescence intensity due to the addition of GeO2 in bismuth-doped silica glass (BiSG), which has a peculiar fluorescence at 1.25 μm with a full width at half-maximum of 300 nm. Experimental results revealed that the fluorescence intensity from BiSG with 5.0 mol% GeO2 increased remarkably to be 26.3 times greater than that without GeO2 additive for the same Bi2O3 concentration (0.1 mol%). Furthermore, the enhanced sample showed almost the same intensity as BiSG without GeO2 for 1.0 mol% Bi2O3. These results demonstrate that GeO2 additive effectively promotes the generation of peculiar luminescent centers.

The infrared, Raman, and resonance Raman spectra and normal coordinate analysis of methyl and ethyl dithioacetate

1982 ◽  
Vol 60 (2) ◽  
pp. 174-189 ◽  
Author(s):  
J. J. C. Teixeira-Dias ◽  
V. M. Jardim-Barreto ◽  
Y. Ozaki ◽  
A. C. Storer ◽  
P. R. Carey
Keyword(s):  
Raman Spectra ◽  
Vibrational Spectra ◽  
Resonance Raman ◽  
Normal Coordinate Analysis ◽  
Raman Intensity ◽  
Normal Coordinate ◽  
Intensity Enhancement ◽  
Strong Intensity ◽  
Resonance Raman Spectra ◽  
Absorbance Peak

Infrared, Raman, and resonance Raman data are reported for ethyl and methyl dithioacetate together with data for their isotopically substituted analogs: CD3C(=S)SCH3, CH3C(=S)SCD3, 13CH3C(=S)SCH3, CH313C(=S)SCH3, CD3C(=S)SCH2CH3, CH3C(=S)SCD2CH3, and CH313C(=S)SCH2CH3. Based on these data and a normal coordinate analysis of methyl dithioacetate, assignments are proposed for the majority of bands appearing in the vibrational spectra. Using excitation wavelengths in the 324–356 nm region strong intensity enhancement is observed for Raman bands near 1195, 1100, 730, and 580 cm−1 which are assigned to stretching motions of the CCSSC skeleton. Raman excitation profiles are reported for the 1197 and 581 cm−1 bands of ethyl dithioacetate and the electronic absorbance peak near 305 nm is identified as the source of resonance Raman intensity enhancement.

A Plasmon-controlled Fluorescence Biochip

2006 ◽  
Author(s):  
Daniel Matthews ◽  
Huw Summers ◽  
Kerenza Njoh ◽  
Sally Chappell ◽  
Rachel Errington ◽  
...  
Keyword(s):  
Plasmon Controlled Fluorescence

electromagnetic field at the particl e has to be computed numerically. An example of such a computation using a program based on [49] is given in Fig. 4. But not only doe s the Mie theory describe an enhancement of the laser intensity in the particles' near field, it also predicts that for certain values of the size parameter nd/X (d denoting the particle diameter, À the laser wavelength) the enhancement should be particularly efficient, resulting in a resonant intensity enhancement, the so-called "Mie-resonances". 3.2.2. Near-field induced substrate damage When inspecting contaminated samples by scanning electron microscopy (SEM) or atomic force microscopy (AFM ) after DLC using ns laser pulses, the consequences of the field enhancement process became obvious: all over the cleaned areas w e found substrate damages localized exactly at the former particle positions [35, 37-39]. These damages manifested as melting pools or even holes in the surface, typical examples can be seen in Fig. 5. The consequences for the laser cleaning process are obvious. The intensity enhancement reduces the maximum laser fluence that can be applied in the process. Usually in laser cleaning studies [19, 31 ] the laser fluence corresponding to the melting threshold of a bare surface is taken as the damage threshold fluence. Our experiments show clearly that this is an inadequate definition. Instead one must take into account the enhanced laser fluence underneath the particles, as it will be discussed in Section 4. Fro m the obtained AFM images we were able to analyse in detail the surface profile at the damaged sites. Here we found that for high field enhancement factors the silicon substrate was not only molten , but that some material was even ablated (see Sec. 4). The momentum transfer to the particles during the ablation process significantly contributes to the cleanin g process and hence local substrate ablation

2003 ◽  
pp. 327-330
Keyword(s):  
Laser Fluence ◽  
Near Field ◽  
Particle Diameter ◽  
Surface Profile ◽  
Field Enhancement ◽  
Damage Threshold ◽  
Laser Pulses ◽  
Laser Wavelength ◽  
Laser Cleaning ◽  
Intensity Enhancement

Intensity enhancement of attosecond XUV pulse by using asymmetric inhomogeneous mid-infrared down-chirped field

2017 ◽  
Vol 31 (26) ◽  
pp. 1750185 ◽  
Author(s):  
Liqiang Feng ◽  
Wenliang Li ◽  
Hang Liu
Keyword(s):  
Laser Intensity ◽  
Temporal Frequency ◽  
Three Dimensional ◽  
Pulse Generation ◽  
Homogeneous Field ◽  
Inhomogeneous Field ◽  
Plasmonic Enhancement ◽  
Positive Direction ◽  
Chirped Pulse ◽  
Intensity Enhancement

Intensity enhancement of the attosecond pulse generation from the high-order harmonic spectra has been theoretically investigated through solving the three-dimensional time-dependent Schrödinger equation. It is found that with the introduction of the down-chirped pulse, the temporal frequency of the down-chirp region is decreased. As a result, the ionized electrons can receive much more energy during its acceleration in this region, showing the extension of the harmonic cutoff. Moreover, due to the multi-harmonic emission events contribute to the higher harmonics, the intensity of the harmonic cutoff from the down-chirped pulse is 1.5 orders of magnitude higher than those from the chirp-free pulse. Further, by properly introducing the asymmetric inhomogeneous effect, the plasmonic enhancement of the laser intensity in the negative direction is larger than that in the positive direction. As a consequence, the ionized electron from the down-chirp region with the negative amplitude can obtain the additional acceleration, thus leading to the further extension of the harmonic cutoff. Especially when the spatial position of the inhomogeneous field is chosen to be the negative value, due to the improved enhancement of the laser intensity, not only the harmonic cutoff is extended but also the harmonic yield is near-stable, showing a 175 eV supercontinuum with the single short quantum path contribution. Finally, by directly superposing the selected harmonics, three attosecond XUV pulses with the full widths at half maximum of 38, 35 and 36 as can be obtained, which are nearly 1.5 orders of magnitude enhancement compared with the chirp-free homogeneous field case.

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