Large Induced Interface Dipole Moments without Charge Transfer: Buckybowls on Metal Surfaces

2011 ◽  
Vol 2 (21) ◽  
pp. 2805-2809 ◽  
Author(s):  
Tobias Bauert ◽  
Laura Zoppi ◽  
Georg Koller ◽  
Alberto Garcia ◽  
Kim K. Baldridge ◽  
...  
1987 ◽  
Vol 105 ◽  
Author(s):  
Hisham Z. Massoud

AbstractThe magnitude of the dipole moment at the Si-SiO2 interface resulting from partial charge transfer that takes place upon the formation of interface bonds has been calculated. The charge transfer occurs because of the difference in electronegativity between silicon atoms and SiO2 molecules which are present across the interface. Results obtained for (100) and (111) silicon substrates indicate that the magnitude of the interface dipole moment is dependent on substrate orientation and the interface chemistry. Dipole moments at the Si-SiO2 and gate-SiO2 interfaces should be included in the definition of the flatband voltage VFB of MOS structures. CV-based measurements of the metal-semiconductor workfunction difference φms on (100) and (111) silicon oxidized in dry oxygen and metallized with Al agree with the predictions of this model. Other types of interface dipoles and their processing dependence are briefly discussed.


1989 ◽  
Vol 138 (2-3) ◽  
pp. 223-230 ◽  
Author(s):  
R.W. Munn ◽  
R.J. Phillips

1984 ◽  
Vol 62 (12) ◽  
pp. 1622-1628 ◽  
Author(s):  
D. L. Cooper ◽  
K. Kirby ◽  
A. Dalgarno

Ab initio calculations are carried out for the dipole moments of the X2Σ+, A2Π, and B2Σ+ states of HeNe+, and the transition dipole moments connecting them. The effects of spin-orbit interactions are explored briefly. The transition dipole moments are used in a calculation of the rate coefficients of radiative charge transfer and radiative association of He+ ions in neon and the associated spectra are obtained. Comparison with experimental data provides support for the conclusion that the radiation detected was emitted in the course of the collisions of He+ with Ne. Some quantitative discrepancies remain which may arise from intensity stealing by the A22Π1/2 state from the X2Σ+ state.


2012 ◽  
Vol 116 (25) ◽  
pp. 13816-13826 ◽  
Author(s):  
Alexey V. Akimov ◽  
Caitlin Williams ◽  
Anatoly B. Kolomeisky

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