Femtosecond Laser Ablation of Liquid Toluene: Molecular Mechanism Studied by Time-Resolved Absorption Spectroscopy

1999 ◽  
Vol 103 (51) ◽  
pp. 11257-11263 ◽  
Author(s):  
Koji Hatanaka ◽  
Tamitake Itoh ◽  
Tsuyoshi Asahi ◽  
Nobuyuki Ichinose ◽  
Shunichi Kawanishi ◽  
...  
Author(s):  
Yasuaki Okano ◽  
Yoichiro Hironaka ◽  
Ken-ichi Kondo ◽  
Kazutaka G. Nakamura

2012 ◽  
Vol 108 (2) ◽  
pp. 343-349 ◽  
Author(s):  
Aivaras Urniežius ◽  
Nerijus Šiaulys ◽  
Viačeslav Kudriašov ◽  
Valdas Sirutkaitis ◽  
Andrius Melninkaitis

1998 ◽  
Vol 127-129 ◽  
pp. 76-80 ◽  
Author(s):  
A Rosenfeld ◽  
D Ashkenasi ◽  
H Varel ◽  
M Wähmer ◽  
E.E.B Campbell

2012 ◽  
Vol 20 (28) ◽  
pp. 29329 ◽  
Author(s):  
Takuro Tomita ◽  
Minoru Yamamoto ◽  
Noboru Hasegawa ◽  
Kota Terakawa ◽  
Yasuo Minami ◽  
...  

2013 ◽  
Vol 31 (3) ◽  
pp. 539-545 ◽  
Author(s):  
Zhandong Chen ◽  
Qiang Wu ◽  
Ming Yang ◽  
Baiquan Tang ◽  
Jianghong Yao ◽  
...  

AbstractGeneration and evolution of plasma during femtosecond laser ablation of silicon are studied by steady-state and time-resolved spectroscopy in air, N2, SF6, and under vacuum. The plasma is generated faster than 200 ps (time resolution of our experiment) after excitation and mainly contains atoms and monovalent ions of silicon. Time-resolved spectra prove that silicon ions are faster than the silicon atoms which may be attributed to Coulomb repulsion and a local electric field when they are ejected from the silicon surface. During plasma evolution, ambient gas causes a confinement effect that enhances the dissociation of ambient gas molecules and the re-deposition of the removed material and leads to higher intensity and longer lifetime of the emission spectra. In SF6, a chemical reaction increases the plasma density and weakens the re-deposition effect. The different processes during plasma evolution strongly influence microstructure formation.


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