Photodissociation Quantum Yield of Iodine in the Low-, Medium-, and High-Density Fluids Studied by the Transient Grating Method

1999 ◽  
Vol 103 (38) ◽  
pp. 7730-7741 ◽  
Author(s):  
H. Ooe ◽  
Y. Kimura ◽  
M. Terazima ◽  
N. Hirota
Agronomy ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 859 ◽  
Author(s):  
Aziz Khan ◽  
Jie Zheng ◽  
Daniel Kean Yuen Tan ◽  
Ahmad Khan ◽  
Kashif Akhtar ◽  
...  

Manipulation of planting density and choice of variety are effective management components in any cropping system that aims to enhance the balance between environmental resource availability and crop requirements. One-time fertilization at first flower with a medium plant stand under late sowing has not yet been attempted. To fill this knowledge gap, changes in leaf structural (stomatal density, stomatal length, stomata width, stomatal pore perimeter, and leaf thickness), leaf gas exchange, and chlorophyll fluorescence attributes of different cotton varieties were made in order to change the planting densities to improve lint yield under a new planting model. A two-year field evaluation was carried out on cotton varieties—V1 (Zhongmian-16) and V2 (J-4B)—to examine the effect of changing the planting density (D1, low, 3 × 104; D2, moderate, 6 × 104; and D3, dense, 9 × 104) on cotton lint yield, leaf structure, chlorophyll fluorescence, and leaf gas exchange attribute responses. Across these varieties, J-4B had higher lint yield compared with Zhongmian-16 in both years. Plants at high density had depressed leaf structural traits, net photosynthetic rate, stomatal conductance, intercellular CO2 uptake, quenching (qP), actual quantum yield of photosystem II (ΦPSII), and maximum quantum yield of PSII (Fv/Fm) in both years. Crops at moderate density had improved leaf gas exchange traits, stomatal density, number of stomata, pore perimeter, length, and width, as well as increased qP, ΦPSII, and Fv/Fm compared with low- and high-density plants. Improvement in leaf structural and functional traits contributed to 15.9%–10.7% and 12.3%–10.5% more boll m−2, with 20.6%–13.4% and 28.9%–24.1% higher lint yield averaged across both years, respectively, under moderate planting density compared with low and high density. In conclusion, the data underscore the importance of proper agronomic methods for cotton production, and that J-4B and Zhongmian-16 varieties, grown under moderate and lower densities, could be a promising option based on improved lint yield in subtropical regions.


1997 ◽  
Vol 70 (11) ◽  
pp. 2657-2664 ◽  
Author(s):  
Yoshifumi Kimura ◽  
Kohei Sugihara ◽  
Masahide Terazima ◽  
Noboru Hirota

2021 ◽  
Vol 12 ◽  
Author(s):  
Yao Guo ◽  
Wen Yin ◽  
Hong Fan ◽  
Zhilong Fan ◽  
Falong Hu ◽  
...  

To some extent, the photosynthetic traits of developing leaves of maize are regulated systemically by water and nitrogen. However, it remains unclear whether photosynthesis is systematically regulated via water and nitrogen when maize crops are grown under close (high density) planting conditions. To address this, a field experiment that had a split-split plot arrangement of treatments was designed. Two irrigation levels on local traditional irrigation level (high, I2, 4,050 m3 ha−1) and reduced by 20% (low, I1, 3,240 m3 ha−1) formed the main plots; two levels of nitrogen fertilizer at a local traditional nitrogen level (high, N2, 360 kg ha−1) and reduced by 25% (low, N1, 270 kg ha−1) formed the split plots; three planting densities of low (D1, 7.5 plants m−2), medium (D2, 9.75 plants m−2), and high (D3, 12 plants m−2) formed the split-split plots. The grain yield, gas exchange, and chlorophyll a fluorescence of the closely planted maize crops were assessed. The results showed that water–nitrogen coupling regulated their net photosynthetic rate (Pn), stomatal conductance (Gs), transpiration rate (Tr), quantum yield of non-regulated non-photochemical energy loss [Y(NO)], actual photochemical efficiency of PSII [Y(II)], and quantum yield of regulated non-photochemical energy loss [Y(NPQ)]. When maize plants were grown at low irrigation with traditional nitrogen and at a medium density (i.e., I1N2D2), they had Pn, Gs, and Tr higher than those of grown under traditional treatment conditions (i.e., I2N2D1). Moreover, the increased photosynthesis in the leaves of maize in the I1N2D2 treatment was mainly caused by decreased Y(NO), and increased Y(II) and Y(NPQ). The coupling of 20%-reduced irrigation with the traditional nitrogen application boosted the grain yield of medium density-planted maize, whose Pn, Gs, Tr, Y(II), and Y(NPQ) were enhanced, and its Y(NO) was reduced. Redundancy analysis revealed that both Y(II) and SPAD were the most important physiological factors affecting maize yield performance, followed by Y(NPQ) and NPQ. Using the 20% reduction in irrigation and traditional nitrogen application at a medium density of planting (I1N2D2) could thus be considered as feasible management practices, which could provide technical guidance for further exploring high yields of closely planted maize plants in arid irrigation regions.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).


Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.


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