Photostimulated Generation of Defects and Surface Reactions on a Series of Wide Band Gap Metal-Oxide Solids

1999 ◽  
Vol 103 (43) ◽  
pp. 9190-9199 ◽  
Author(s):  
A. V. Emeline ◽  
G. V. Kataeva ◽  
V. K. Ryabchuk ◽  
N. Serpone
Keyword(s):  
Metal Oxide ◽  
Band Gap ◽  
Surface Reactions ◽  
Wide Band ◽  
Wide Band Gap

Effect of Surface Photoreactions on the Photocoloration of a Wide Band Gap Metal Oxide:  Probing Whether Surface Reactions Are Photocatalytic

2005 ◽  
Vol 109 (11) ◽  
pp. 5175-5185 ◽  
Author(s):  
A. V. Emeline ◽  
G. V. Kataeva ◽  
A. V. Panasuk ◽  
V. K. Ryabchuk ◽  
N. V. Sheremetyeva ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Band Gap ◽  
Surface Reactions ◽  
Wide Band ◽  
Wide Band Gap ◽  
Effect Of Surface

scholarly journals Sensitization of wide band gap photocatalysts to visible light by molten CuCl treatment

2015 ◽  
Vol 6 (1) ◽  
pp. 687-692 ◽  
Author(s):  
Katsuya Iwashina ◽  
Akihide Iwase ◽  
Akihiko Kudo
Keyword(s):  
Metal Oxide ◽  
Visible Light ◽  
Band Gap ◽  
Hydrogen Evolution ◽  
Visible Light Irradiation ◽  
Wide Band ◽  
Light Irradiation ◽  
Wide Band Gap

Cu(i)-containing metal oxide photocatalysts for hydrogen evolution under visible light irradiation were prepared using molten CuCl treatment.

Rare earth oxides in zirconium dioxide: How to turn a wide band gap metal oxide into a visible light active photocatalyst

2017 ◽  
Vol 26 (2) ◽  
pp. 270-276 ◽  
Author(s):  
Chiara Gionco ◽  
Maria C. Paganini ◽  
Elio Giamello ◽  
Olga Sacco ◽  
Vincenzo Vaiano ◽  
...  
Keyword(s):  
Rare Earth ◽  
Metal Oxide ◽  
Visible Light ◽  
Band Gap ◽  
Zirconium Dioxide ◽  
Wide Band ◽  
Rare Earth Oxides ◽  
Wide Band Gap ◽  
Visible Light Active

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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