Diffusion-Limited Reaction Rates on Self-Affine Fractals

1997 ◽  
Vol 101 (19) ◽  
pp. 3781-3787 ◽  
Author(s):  
Rama Kant
2015 ◽  
Vol 143 (21) ◽  
pp. 215102 ◽  
Author(s):  
Paweł Nałęcz-Jawecki ◽  
Paulina Szymańska ◽  
Marek Kochańczyk ◽  
Jacek Miękisz ◽  
Tomasz Lipniacki

1990 ◽  
Vol 202 ◽  
Author(s):  
S. M. Heald ◽  
J. K. D. Jayanetti ◽  
R. C. Budhani

ABSTRACTThe amorphous to crystalline transformation of Ge in Al/Ge thin film couples has been studied using glancing angle EXAFS, x-ray reflectivity and diffraction. It was found that crystallization occurs at a much lower temperature (118-150 °C) than for bulk Ge, and initiates at the Al/Ge interface. X-ray diffraction studies were made at 152 °C to study the kinetics of the reaction. After an initial period we find good agreement with a square root dependence of the time, characteristic of a diffusion limited reaction.


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