scholarly journals Characterization of Al2O3-Supported Manganese Oxides by Electron Spin Resonance and Diffuse Reflectance Spectroscopy

1997 ◽  
Vol 101 (3) ◽  
pp. 309-316 ◽  
Author(s):  
W. Sjoerd Kijlstra ◽  
Eduard K. Poels ◽  
Alfred Bliek ◽  
Bert M. Weckhuysen ◽  
Robert A. Schoonheydt
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Manganese Oxides ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
Reflectance Spectroscopy ◽  
Spin Resonance

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

scholarly journals Characterization of manganese in coal by electron spin resonance.

1985 ◽  
Vol 34 (5) ◽  
pp. 243-247 ◽  
Author(s):  
Junichi SHIDA ◽  
Mamoru ITOH ◽  
Tateaki OGATA ◽  
Hitoshi KAMADA
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance

scholarly journals Two-dimensional pulsed electron spin resonance characterization of 15 N-labeled archaeal Rieske-type ferredoxin

FEBS Letters ◽  
2009 ◽  
Vol 583 (21) ◽  
pp. 3467-3472 ◽  
Author(s):  
Toshio Iwasaki ◽  
Rimma I. Samoilova ◽  
Asako Kounosu ◽  
Sergei A. Dikanov
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Two Dimensional ◽  
Spin Resonance
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