Investigation of the Electronic Transport Properties of Nanocrystalline Particulate TiO2Electrodes by Intensity-Modulated Photocurrent Spectroscopy

1997 ◽  
Vol 101 (14) ◽  
pp. 2716-2722 ◽  
Author(s):  
P. E. de Jongh ◽  
D. Vanmaekelbergh
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties ◽  
Intensity Modulated ◽  
Photocurrent Spectroscopy ◽  
Intensity Modulated Photocurrent Spectroscopy

scholarly journals Modulated Photocurrent Spectroscopy Study of the Electronic Transport Properties of Working Organic Photovoltaics: Degradation Analysis

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2660
Author(s):  
Emi Nakatsuka ◽  
Yo Kumoda ◽  
Kiyohito Mori ◽  
Takashi Kobayashi ◽  
Takashi Nagase ◽  
...  
Keyword(s):  
Transport Properties ◽  
Organic Photovoltaics ◽  
Electronic Transport ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Acid Methyl Ester ◽  
Short Circuit Current ◽  
Electronic Transport Properties ◽  
Photocurrent Spectroscopy ◽  
Donor And Acceptor

Electronic transport measurement using modulated photocurrent (MPC) spectroscopy is demonstrated herein in working organic photovoltaics (OPVs) before and after AM1.5G irradiation. OPVs with bulk heterojunction (BHJ) using prototypical donor and acceptor materials, poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1–2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] = hieno [3–4-b]thiophenediyl]] (PTB7) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), were fabricated. The OPVs had inverted structures (BHJs are formed on transparent conductive oxide substrates). The photovoltaic performance of PTB7:PC71BM OPVs was characterized and the best power conversion efficiency was obtained at PTB7 content of 40 wt%. Electron and hole mobility were determined with MPC spectroscopy in PTB7:PC71BM OPVs and were well balanced at PTB7 content of 40 wt%. Degradation of the photovoltaic performance of PTB7:PC71BM OPVs with PTB7 content of 40 wt% caused by AM1.5G irradiation was studied. MPC spectroscopy showed that the well-balanced mobility was not affected by AM1.5G irradiation. The degradation of OPVs was not due to changes in the electronic transport properties, but mainly to the reduced short circuit current (Jsc) and fill factor (FF). The origin of this reduction is discussed.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

scholarly journals Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Practical Importance ◽  
Functional Formalism ◽  
Vacancy Defects ◽  
Electronic Transport Properties ◽  
Charge Localization ◽  
Metal Insulator Metal ◽  
Current Rectification

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.

Evolution of atomic structure and electronic transport properties in n-type Bi2Te3 films via Bi2 planar defects

2021 ◽  
Vol 118 (10) ◽  
pp. 103901
Author(s):  
Min Zhang ◽  
Wei Liu ◽  
Cheng Zhang ◽  
Sen Xie ◽  
Fuqiang Hua ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Atomic Structure ◽  
Planar Defects ◽  
Electronic Transport Properties

scholarly journals Effect of chemical modification on electronic transport properties of carbyne

2021 ◽  
Author(s):  
G. R. Berdiyorov ◽  
U. Khalilov ◽  
H. Hamoudi ◽  
Erik C. Neyts
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Structural Changes ◽  
Carbon Chain ◽  
Functional Formalism ◽  
Functional Theory ◽  
Carbon Allotrope ◽  
Electronic Transport Properties ◽  
Interface Structures

AbstractUsing density functional theory in combination with the Green’s functional formalism, we study the effect of surface functionalization on the electronic transport properties of 1D carbon allotrope—carbyne. We found that both hydrogenation and fluorination result in structural changes and semiconducting to metallic transition. Consequently, the current in the functionalization systems increases significantly due to strong delocalization of electronic states along the carbon chain. We also study the electronic transport in partially hydrogenated carbyne and interface structures consisting of pristine and functionalized carbyne. In the latter case, current rectification is obtained in the system with rectification ratio up to 50%. These findings can be useful for developing carbyne-based structures with tunable electronic transport properties.

scholarly journals Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

Nano Letters ◽  
2013 ◽  
Vol 13 (9) ◽  
pp. 4212-4216 ◽  
Author(s):  
Britton W. H. Baugher ◽  
Hugh O. H. Churchill ◽  
Yafang Yang ◽  
Pablo Jarillo-Herrero
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
High Quality ◽  
Electronic Transport Properties
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