Basic Reaction Steps in the Sulfidation of Crystalline MoO3to MoS2, As Studied by X-ray Photoelectron and Infrared Emission Spectroscopy

1996 ◽  
Vol 100 (33) ◽  
pp. 14144-14150 ◽  
Author(s):  
Th. Weber ◽  
J. C. Muijsers ◽  
J. H. M. C. van Wolput ◽  
C. P. J. Verhagen ◽  
J. W. Niemantsverdriet
Keyword(s):  
Emission Spectroscopy ◽  
Infrared Emission ◽  
X Ray ◽  
Infrared Emission Spectroscopy ◽  
Basic Reaction

ChemInform Abstract: Basic Reaction Steps in the Sulfidation of Crystralline MoO3 to MoS2, as Studied by X-Ray Photoelectron and Infrared Emission Spectroscopy.

ChemInform ◽  
2010 ◽  
Vol 27 (51) ◽  
pp. no-no
Author(s):  
TH. WEBER ◽  
J. C. MUIJSERS ◽  
J. H. M. C. VAN WOLPUT ◽  
C. P. J. VERHAGEN ◽  
J. W. NIEMANTSVERDRIET
Keyword(s):  
Emission Spectroscopy ◽  
Infrared Emission ◽  
X Ray ◽  
Infrared Emission Spectroscopy ◽  
Basic Reaction

The application of high-temperature X-ray diffraction and infrared emission spectroscopy to the thermal decomposition of kröhnkite

2016 ◽  
Vol 126 (3) ◽  
pp. 1089-1095 ◽  
Author(s):  
Leonardo Pena Testasicca ◽  
Ray L. Frost ◽  
Xiuxiu Ruan ◽  
Jéssica Lima ◽  
Fernanda Maria Belotti ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
High Temperature ◽  
Emission Spectroscopy ◽  
Infrared Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infrared Emission Spectroscopy

scholarly journals Infrared emission spectroscopy study of the dehydroxylation of 10 Å halloysite from a Neogene cryptokarst of South Belgium

2000 ◽  
Vol 2 (3-4) ◽  
pp. 213-220 ◽  
Author(s):  
J. Theo KLOPROGGE ◽  
Ray L. FROST
Keyword(s):  
High Temperatures ◽  
Emission Spectroscopy ◽  
Low Frequency ◽  
Infrared Emission ◽  
Rapid Decrease ◽  
The Other ◽  
Spectroscopy Study ◽  
X Ray ◽  
Infrared Emission Spectroscopy

The dehydroxylation of 10 Å halloysite from the Wellin (Weillen) cryptokarst (southern Belgium) was studied in situ by applying infrared emission spectroscopy. Dehydroxylation is evidenced by the loss of the OH-stretching modes between 3600 and 3700 cm-1. A slow decrease of all intensities up to ± 500 °C is observed followed between 500° and 550 °C by a rapid decrease to almost zero. The IES bands at 920 and 938 cm-1, attributed to the accompanying inner and outer or inner sheet Al-OH libration modes, are removed on heating at the same rate and disappears at the same temperature as the OH-stretching bands. The low frequency bands that disappear upon heating are associated with OH-libration (920 and 938 cm-1) or OH-translation modes (798, 754 and 693 cm-1). At high temperatures only very broad bands around 800 cm-1, a weak shoulder around 900 cm-1 and two broad bands around 1000 and 1175 cm-1 are observed. The first two are associated with newly formed Al-O bonds whereas the other two are associated with Si-O bonds in the dehydroxylated halloysite, an X-ray amorphous mullite-like phase.

X-ray- and electron-induced infrared emission spectroscopy

2009 ◽  
Vol 80 (4) ◽  
pp. 046104
Author(s):  
R. A. Rosenberg ◽  
M. Abu Haija ◽  
S. P. Watkins
Keyword(s):  
Emission Spectroscopy ◽  
Infrared Emission ◽  
X Ray ◽  
Infrared Emission Spectroscopy

Infrared Emission Spectroscopy as a Reliability Tool

1999 ◽  
Author(s):  
Q. Kim ◽  
S. Kayali
Keyword(s):  
Spatial Resolution ◽  
Emission Spectroscopy ◽  
Hot Spot ◽  
Cost Effective ◽  
Infrared Emission ◽  
Test System ◽  
Operating Conditions ◽  
Yield Enhancement ◽  
Infrared Emission Spectroscopy ◽  
Channel Temperature

Abstract In this paper, we report on a non-destructive technique, based on IR emission spectroscopy, for measuring the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). A submicron-size He-Ne laser provides the local excitation of the gate channel and the emitted photons are collected by a spectrophotometer. Given the state of our experimental test system, we estimate a spectral resolution of approximately 0.1 Angstroms and a spatial resolution of approximately 0.9 μm, which is up to 100 times finer spatial resolution than can be obtained using the best available passive IR systems. The temperature resolution (<0.02 K/μm in our case) is dependent upon the spectrometer used and can be further improved. This novel technique can be used to estimate device lifetimes for critical applications and measure the channel temperature of devices under actual operating conditions. Another potential use is cost-effective prescreening for determining the 'hot spot' channel temperature of devices under normal operating conditions, which can further improve device design, yield enhancement, and reliable operation. Results are shown for both a powered and unpowered MESFET, demonstrating the strength of our infrared emission spectroscopy technique as a reliability tool.

Sign in / Sign up

Export Citation Format

Share Document