Thermochemistry and Electronic Structure of Small Boron Clusters (Bn,n= 5−13) and Their Anions

2010 ◽  
Vol 114 (2) ◽  
pp. 994-1007 ◽  
Author(s):  
Truong Ba Tai ◽  
Daniel J. Grant ◽  
Minh Tho Nguyen ◽  
David A. Dixon
Keyword(s):  
Electronic Structure ◽  
Boron Clusters

Relation between electronic structure and coordination number for boron clusters

1985 ◽  
Vol 20 (5) ◽  
pp. 565-567
Author(s):  
S. A. Prosandeev ◽  
Yu. B. Paderno ◽  
V. P. Sachenko
Keyword(s):  
Electronic Structure ◽  
Coordination Number ◽  
Boron Clusters

Electronic Structure and Properties of Silicon-Doped Boron Clusters BnSi with n = 15–24 and Their Anions

2020 ◽  
Vol 124 (12) ◽  
pp. 6770-6783 ◽  
Author(s):  
Dang Thi Tuyet Mai ◽  
Long Van Duong ◽  
My Phuong Pham-Ho ◽  
Minh Tho Nguyen
Keyword(s):  
Electronic Structure ◽  
Structure And Properties ◽  
Boron Clusters ◽  
Silicon Doped

Electronic Structure and Chemical Bonding in the Double Ring Tubular Boron Clusters

2014 ◽  
Vol 118 (41) ◽  
pp. 24181-24187 ◽  
Author(s):  
Hung Tan Pham ◽  
Long Van Duong ◽  
Minh Tho Nguyen
Keyword(s):  
Electronic Structure ◽  
Chemical Bonding ◽  
Boron Clusters ◽  
Double Ring

Electronic structure and photoelectron spectra of Bnwith n = 26–29: an overview of structural characteristics and growth mechanism of boron clusters

2015 ◽  
Vol 17 (20) ◽  
pp. 13672-13679 ◽  
Author(s):  
Truong Ba Tai ◽  
Minh Tho Nguyen
Keyword(s):  
Electronic Structure ◽  
Growth Mechanism ◽  
Structural Characteristics ◽  
Photoelectron Spectra ◽  
Boron Clusters

In this report, the electronic structure and photoelectron spectra of boron clusters B26–29were theoretically investigated and an overview of the growth mechanism of boron clusters was shown.

Actinide endohedral boron clusters: A closed-shell electronic structure of U@B40

Nano Research ◽  
2017 ◽  
Vol 11 (1) ◽  
pp. 354-359 ◽  
Author(s):  
Tianrong Yu ◽  
Yang Gao ◽  
Dexuan Xu ◽  
Zhigang Wang
Keyword(s):  
Electronic Structure ◽  
Closed Shell ◽  
Boron Clusters

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

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