Theoretical Investigation on the Electron Transport Path through the Porphyrin Molecules and Chemisorption of CO

2009 ◽  
Vol 113 (17) ◽  
pp. 7416-7423 ◽  
Author(s):  
Nan Wang ◽  
Hongmei Liu ◽  
Jianwei Zhao ◽  
Yanping Cui ◽  
Zhong Xu ◽  
...  
2011 ◽  
Vol 127 (1) ◽  
pp. 91-96
Author(s):  
Shengkui Zhong ◽  
Yuebin Xu ◽  
Yanwei Li ◽  
Jinhuan Yao ◽  
Jianwen Yang

2019 ◽  
Vol 43 (14) ◽  
pp. 5414-5422 ◽  
Author(s):  
Keke Wen ◽  
Xiao Pan ◽  
Songyan Feng ◽  
Wenpeng Wu ◽  
Xugeng Guo ◽  
...  

The properties of designed sulfur-containing azaacene electron transport materials by changing side chains are theoretically investigated.


2004 ◽  
Vol 121 (13) ◽  
pp. 6485-6492 ◽  
Author(s):  
Jun Nara ◽  
W. T. Geng ◽  
Hiori Kino ◽  
Nobuhiko Kobayashi ◽  
Takahisa Ohno

Author(s):  
Е.И. Гольдман ◽  
А.Э. Набиев ◽  
В.Г. Нарышкина ◽  
Г.В. Чучева

AbstractThe conduction characteristics of the inversion channel of Si-transistor structures after the ionic polarization and depolarization of samples are measured in (0–5)-T transverse magnetic fields at temperatures from 100 to 200 K. After ionic polarization in a strong electric field at 420 K, no less than 6 × 10^13 cm^–2 ions flowed through the oxide. The previously found tenfold increase in the conductivity in the source–drain circuit after the polarization of insulating layers is explained by the formation of a new electron transport path along the surface impurity band, related to delocalized D^– states; these states are generated by neutralized ions located in the insulating layer at its interface with the semiconductor.


2017 ◽  
Vol 9 (23) ◽  
pp. 20010-20019 ◽  
Author(s):  
Yue Zhang ◽  
David A. Hanifi ◽  
M. Paz Fernández-Liencres ◽  
Liana M. Klivansky ◽  
Biwu Ma ◽  
...  

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