Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)

2009 ◽  
Vol 113 (18) ◽  
pp. 7898-7903 ◽  
Author(s):  
Baohua Zhang ◽  
Wenmu Li ◽  
Junwei Yang ◽  
Yingying Fu ◽  
Zhiyuan Xie ◽  
...  
2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Chun-Hsuan Lin ◽  
Kun-Tso Chen ◽  
Jeng-Rong Ho ◽  
J.-W. John Cheng ◽  
Raymond Chien-Chao Tsiang

We report on effects of doping graphene in poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate), PEDOT:PSS, as a PEDOT:PSS/graphene nanocomposite hole injection layer on the performance enhancement of polymer light-emitting diodes (PLEDs). Graphene oxides were first synthesized and then mixed in the PEDOT:PSS solution with specifically various amounts. Graphenes were reduced in the PEDOT:PSS matrix through thermal reduction. PLED devices with hole-injection nanocomposite layer containing particular doping concentration were fabricated, and the influence of doping concentration on device performance was examined by systematically characterizations of various device properties. Through the graphene doping, the resistance in the hole-injection layer and the turn-on voltage could be effectively reduced that benefited the injection and transport of holes and resulted in a higher overall efficiency. The conductivity of the hole-injection layer was monotonically increased with the increase of doping concentration, performance indices from various aspects, however, did not show the same dependence because faster injected holes might alter not only the balance of holes and electrons but also their combination locations in the light-emitting layer. Results show that optimal doping concentration was the case with 0.03 wt% of graphene oxide.


2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2021 ◽  
Vol 9 (36) ◽  
pp. 12068-12072
Author(s):  
Wentao Li ◽  
Jiaxiang Liu ◽  
Baowen Wang ◽  
Siyu Hou ◽  
Xingqiang Lü ◽  
...  

Based on geometrical isomerisation of [Ir(C^N1)(C^N2)((N^O))]-tris-heteroleptic Ir(iii)-complexes, the augmented transition dipole transition (TMD) with a preferential horizontal orientation, which is beneficial for their NIR-phosphorescence, is reported.


2001 ◽  
Vol 79 (2) ◽  
pp. 174-176 ◽  
Author(s):  
T. M. Brown ◽  
R. H. Friend ◽  
I. S. Millard ◽  
D. J. Lacey ◽  
J. H. Burroughes ◽  
...  

2008 ◽  
Vol 20 (4) ◽  
pp. 696-702 ◽  
Author(s):  
H. B. Wu ◽  
J. H. Zou ◽  
F. Liu ◽  
L. Wang ◽  
A. Mikhailovsky ◽  
...  

Materials ◽  
2013 ◽  
Vol 6 (5) ◽  
pp. 1994-2006 ◽  
Author(s):  
Mohammad Rezvani ◽  
Farid Farajollahi ◽  
Alireza Nikfarjam ◽  
Parisa Bakhtiarpour ◽  
Erfan Saydanzad

2007 ◽  
Vol 17 (33) ◽  
pp. 3551 ◽  
Author(s):  
J. Huang ◽  
X. Wang ◽  
A. J. deMello ◽  
J. C. deMello ◽  
D. D. C. Bradley

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