One-Step Growth and Field Emission Properties of SnO2-Capped Silicon Nanowires: A Sn-Catalyzed Approach

2009 ◽  
Vol 113 (16) ◽  
pp. 6450-6453 ◽  
Author(s):  
Hang Chi ◽  
Hui-Chao Zhu ◽  
Hong-Jun Xu ◽  
Xu-Dong Shan ◽  
Zhi-Min Liao ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Emission Properties ◽  
Field Emission Properties ◽  
One Step ◽  
Step Growth

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Light Emitting ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Doped Silicon ◽  
Er Doped

High-density ordered triangular Si nanopillars with sharp tips and varied slopes: one-step fabrication and excellent field emission properties

2007 ◽  
Vol 18 (50) ◽  
pp. 505305 ◽  
Author(s):  
Ho-Yen Hsieh ◽  
Sheng-Huang Huang ◽  
Kao-Fen Liao ◽  
Sheng-Kai Su ◽  
Chih-Huang Lai ◽  
...  
Keyword(s):  
Field Emission ◽  
High Density ◽  
Emission Properties ◽  
Field Emission Properties ◽  
One Step

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

RSC Advances ◽  
2014 ◽  
Vol 4 (60) ◽  
pp. 31729-31734 ◽  
Author(s):  
Shasha Lv ◽  
Zhengcao Li ◽  
Shiming Su ◽  
Linhan Lin ◽  
Zhengjun Zhang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Field Emission ◽  
Silicon Nanowires ◽  
Surface Geometry ◽  
Emission Properties ◽  
Field Emission Properties

The FE properties were influenced by dimensionality and surface geometry structures, and improved with the increase of proximity.

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