Ultrathin-Film Growth ofpara-Sexiphenyl (I): Submonolayer Thin-Film Growth as a Function of the Substrate Temperature

2008 ◽  
Vol 112 (26) ◽  
pp. 7816-7820 ◽  
Author(s):  
Junliang Yang ◽  
Tong Wang ◽  
Haibo Wang ◽  
Feng Zhu ◽  
Gao Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ultrathin Film ◽  
Thin Film Growth

The Analysis of the Film Morphology

2013 ◽  
Vol 734-737 ◽  
pp. 2377-2381
Author(s):  
Bo Xiong Zhao ◽  
Yu Jian Du ◽  
Xin Sui
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ybco Film ◽  
Thin Film Growth ◽  
Schematic Diagram ◽  
Film Morphology ◽  
Crystal Film ◽  
New Type

Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySbyand YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ，to analyse the effects of different elements on the surface of the crystal film.

EFFECT OF SURFACTANT AND SUBSTRATE TEMPERATURE ON THE GROWTH OF Ag FILMS ON A SAPPHIRE SURFACE

1997 ◽  
Vol 04 (02) ◽  
pp. 219-222 ◽  
Author(s):  
T. LEWOWSKI ◽  
P. WIECZOREK
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Sapphire Substrate ◽  
Metal Film ◽  
Film Growth ◽  
Substrate Surface ◽  
Thin Metal Film ◽  
Thin Film Growth ◽  
Sapphire Surface ◽  
Electrically Conducting

The possibility of modification of the thin film growth on an insulating (sapphire) substrate by using a Ga monolayer as a "surfactant" was studied. We found that the films grown in this way are electrically conducting and can emit photoelectrons at much lower thickness than those deposited on a pure substrate. The surfactant stabilizes the positions of Ag atoms on the substrate surface and inhibits the coalescence of small nuclei into bigger islands, even when the film is annealed to 450 K. This fact may be very important for thin metal film technology.

Influence of kinetic energy and substrate temperature on thin film growth in pulsed laser deposition

2006 ◽  
Vol 200 (12-13) ◽  
pp. 4027-4031 ◽  
Author(s):  
D.M. Zhang ◽  
L. Guan ◽  
Z.H. Li ◽  
G.J. Pan ◽  
H.Z. Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Kinetic Energy ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition

Molecular Dynamics Simulation of Ni/Cu Epitaxial Thin Film Growth

2011 ◽  
Vol 320 ◽  
pp. 373-376
Author(s):  
Zhi Qiang Liu ◽  
Jie Li ◽  
Nai Gen Zhou ◽  
Jian Ning Wei
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Substrate Temperature ◽  
Growth Pattern ◽  
Film Growth ◽  
Three Dimensional ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
Lower Temperature ◽  
The Impact

In this paper, the growth process of Ni deposited on the Cu() surface at 300K and 700K was simulated by molecular dynamics. The impact of the substrate temperature on the growth pattern and structure of thin film was investigated. The simulation results show that, at the higher substrate temperature, the surface of thin film is smoother and the growth pattern of thin film is two-dimensional layer, however, at the lower temperature, the growth mode of thin film is three-dimensional island.

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth
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