Charge-Sensitive Surface Optical Phonon in CdS Quantum Dots Studied by Resonant Raman Spectroscopy

2014 ◽  
Vol 118 (51) ◽  
pp. 30269-30273 ◽  
Author(s):  
Yongkuan Wu ◽  
Shaoqing Jin ◽  
Yun Ye ◽  
Shengyang Wang ◽  
Zhaochi Feng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Optical Phonon ◽  
Cds Quantum Dots ◽  
Surface Optical ◽  
Resonant Raman

Raman spectroscopy of electrochemically self-assembled CdS quantum dots

2000 ◽  
Vol 76 (2) ◽  
pp. 137-139 ◽  
Author(s):  
A. Balandin ◽  
K. L. Wang ◽  
N. Kouklin ◽  
S. Bandyopadhyay
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Cds Quantum Dots ◽  
Self Assembled

Plasmon induced enhancement of surface optical phonon modes and magnon properties of NiO nanoparticles: Raman spectral probe

2020 ◽  
Vol 22 (39) ◽  
pp. 22815-22822 ◽  
Author(s):  
Anoop Sunny ◽  
Karthikeyan Balasubramanian
Keyword(s):  
Raman Spectroscopy ◽  
Optical Phonon ◽  
Room Temperature ◽  
Nio Nanoparticles ◽  
Phonon Modes ◽  
Surface Optical ◽  
Raman Spectral

In the present work, the influence of Ag-induced plasmons on the surface optical (SO) phonon modes of NiO nanoparticles was extensively studied using room temperature Raman spectroscopy.

scholarly journals Interface formation during silica encapsulation of colloidal CdSe/CdS quantum dots observed by in situ Raman spectroscopy

2017 ◽  
Vol 146 (13) ◽  
pp. 134708 ◽  
Author(s):  
Amelie Biermann ◽  
Tangi Aubert ◽  
Philipp Baumeister ◽  
Emile Drijvers ◽  
Zeger Hens ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Cds Quantum Dots ◽  
Interface Formation ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Silica Encapsulation

Raman spectroscopy of very small Cd1−x Cox S quantum dots grown by a novel protocol: direct observation of acoustic-optical phonon coupling

2013 ◽  
Vol 44 (7) ◽  
pp. 1022-1032 ◽  
Author(s):  
E. S. Freitas Neto ◽  
A. C. A. Silva ◽  
S. W. da Silva ◽  
P. C. Morais ◽  
J. A. Gómez ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Direct Observation ◽  
Optical Phonon ◽  
Phonon Coupling

Off-Resonant Raman Spectroscopy of ZnS Quantum Dots

2017 ◽  
pp. 203-215
Author(s):  
Radmila Kostić ◽  
Dušanka Stojanović ◽  
Jelena Trajić ◽  
P. Balaž
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Resonant Raman

Interface/surface optical phonon in onion-like quantum dots

2012 ◽  
Vol 34 (5) ◽  
pp. 832-837 ◽  
Author(s):  
Yang Yang ◽  
Cheng Cheng
Keyword(s):  
Quantum Dots ◽  
Optical Phonon ◽  
Interface Surface ◽  
Surface Optical

scholarly journals Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
A. D. Rodrigues ◽  
A. J. Chiquito ◽  
G. Zanelatto ◽  
A. G. Milekhin ◽  
A. I. Nikiforov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Capacitance Measurements ◽  
Stress Effects ◽  
Quantum Confinement Effects ◽  
Opposite Behavior ◽  
Different Temperatures ◽  
Internal Mechanical Stress ◽  
Resonant Raman ◽  
Phonon Localization

Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs) grown at various temperatures by molecular beam epitaxy were investigated using resonant Raman spectroscopy and capacitance measurements. The occurrence of quantum confinement effects was confirmed by both techniques. For the structures grown at low temperatures (300−400°C), the SAQDs optical phonon wavenumbers decrease as the Raman excitation energy is increased; this is an evidence of the scattering sensitivity to the size of the SAQDs and to the inhomogeneity in their sizes. However, the opposite behavior is observed for the SAQDs grown at higher temperatures, as a consequence of the competition between the phonon localization and internal mechanical stress effects. TheE1electronic transition of the Ge in the SAQDs was found to be shifted towards higher energies as compared to bulk Ge, due to biaxial compressive stress and to the electronic confinement effect present in the structures. The intermixing of Si atoms in the quantum dots was found to be much more significant for the sample grown at higher temperatures. The capacitance measurements, besides confirming the existence of the dots in these structures, showed that the deepest Ge layers lose their 0D signature as the growth temperature increases.

Surface-optical phonon assisted transitions in quantum dots

2004 ◽  
Vol 96 (4) ◽  
pp. 2049-2054 ◽  
Author(s):  
Chen Chen ◽  
Mitra Dutta ◽  
Michael A. Stroscio
Keyword(s):  
Quantum Dots ◽  
Optical Phonon ◽  
Surface Optical
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