Triplet–Triplet Annihilation-Induced Up-Converted Delayed Luminescence in Solid-State Organic Composites: Monitoring Low-Energy Photon Up-Conversion at Low Temperatures

2014 ◽  
Vol 118 (26) ◽  
pp. 14256-14265 ◽  
Author(s):  
Hossein Goudarzi ◽  
Panagiotis E. Keivanidis
Keyword(s):  
Solid State ◽  
Low Temperatures ◽  
Low Energy ◽  
Delayed Luminescence ◽  
Energy Photon ◽  
Organic Composites ◽  
Triplet Triplet Annihilation

Photocurrent Enhancement from Solid-State Triplet–Triplet Annihilation Upconversion of Low-Intensity, Low-Energy Photons

ACS Photonics ◽  
2016 ◽  
Vol 3 (5) ◽  
pp. 784-790 ◽  
Author(s):  
Chuanhao Li ◽  
Christopher Koenigsmann ◽  
Fan Deng ◽  
Anna Hagstrom ◽  
Charles A. Schmuttenmaer ◽  
...  
Keyword(s):  
Solid State ◽  
Low Energy ◽  
Low Intensity ◽  
Triplet Triplet Annihilation

EDR2 film dosimetry for IMRT verification using low-energy photon filters

2004 ◽  
Vol 31 (7) ◽  
pp. 1960-1963 ◽  
Author(s):  
Inhwan Jason Yeo ◽  
Akbar Beiki-Ardakani ◽  
Young-bin Cho ◽  
Mostafa Heydarian ◽  
Ting Zhang ◽  
...  
Keyword(s):  
Low Energy ◽  
Film Dosimetry ◽  
Energy Photon ◽  
Edr2 Film ◽  
Imrt Verification

Bi-Crystal Compensation Method for the Over-Response of Solid-State Dosimetry

2014 ◽  
Vol 605 ◽  
pp. 540-543 ◽  
Author(s):  
Ruo Xi Wang ◽  
Patrick Pittet ◽  
Julien Ribouton ◽  
Guo Neng Lu ◽  
Jean Marc Galvan ◽  
...  
Keyword(s):  
Solid State ◽  
Measured Data ◽  
Compensation Method ◽  
Low Energy ◽  
Field Size ◽  
Reference Curve ◽  
Pencil Beam ◽  
Dose Ratio ◽  
Highly Sensitive

Solid-state dosimetry employs highly sensitive semiconductors such as Gallium Nitride (GaN) and Silicon (Si), but they have a common drawback of over response compared to tissues for low-energy scattered photons, which induces inacceptable errors for radiotherapy application. To tackle this issue, we propose a compensation method consisting in using two different materials of dosimetric interest with different atomic numbers. Their responses are denoted as SC1 and SC2. The response ratio SC1/water as a function of the ratio SC1/SC2 exhibits a monotonic curve that can serve as reference to compensate the over-response of SC1. To validate this method, we have studied the dosimetric response of GaN (0.1 mm3) and Si crystals (2.5 mm3) by simulations, using a validated model based on the general cavity theory in a homogeneous water phantom. The dosimetric response of GaN and Si calculated using the model has errors within 2.5% compared to measured data. The local fluence spectra have been obtained by convolution of pencil beam kernel built by Monte Carlo simulations for different clinical irradiation conditions with field size (from 5×5 cm2up to 20×20 cm2) at depth in the phantom (from 2 cm to 25 cm). The obtained results confirm a monotone relationship between GaN/water dose ratio and GaN/Si dose ratio. The reference curve is independent of irradiation conditions (field size, dosimeter position...), and allows determination of compensation value by identification.

Study of the reaction mechanism between electroless Ni–P and Sn and its effect on the crystallization of Ni–P

2003 ◽  
Vol 18 (1) ◽  
pp. 4-7 ◽  
Author(s):  
Y. C. Sohn ◽  
Jin Yu ◽  
S. K. Kang ◽  
W. K. Choi ◽  
D. Y. Shih
Keyword(s):  
Reaction Mechanism ◽  
Solid State ◽  
Solid State Reaction ◽  
Crystallization Temperature ◽  
Low Temperatures ◽  
Transformation Temperature ◽  
The Self ◽  
Heat Of Reaction ◽  
Solder Reaction ◽  
Electroless Ni

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.

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