Match the Interfacial Energy Levels between Hole Transport Layer and Donor Polymer To Achieve High Solar Cell Performance

2014 ◽  
Vol 118 (40) ◽  
pp. 22834-22839 ◽  
Author(s):  
Luyao Lu ◽  
Tao Xu ◽  
In Hwan Jung ◽  
Luping Yu
Keyword(s):  
Solar Cell ◽  
Interfacial Energy ◽  
Energy Levels ◽  
Hole Transport ◽  
Cell Performance ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solar Cell Performance

Effect of gold nanoparticle in hole-transport layer on inverted organic thin-film solar cell performance

2014 ◽  
Vol 211 (7) ◽  
pp. 1645-1650 ◽  
Author(s):  
Tsuyoshi Akiyama ◽  
Takuji Nishida ◽  
Taisuke Matsumoto ◽  
Hiroshi Sakaguchi ◽  
Atsushi Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Gold Nanoparticle ◽  
Thin Film Solar Cell ◽  
Hole Transport ◽  
Cell Performance ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Organic Thin Film ◽  
Solar Cell Performance

scholarly journals Application of A Novel, Non-Doped, Organic Hole-Transport Layer into Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells

2019 ◽  
Vol 9 (21) ◽  
pp. 4721 ◽  
Author(s):  
Tom Grace ◽  
Hong Duc Pham ◽  
Christopher T. Gibson ◽  
Joseph G. Shapter ◽  
Prashant Sonar
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Carbon Nanotube ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Large Area ◽  
Solar Cell Performance ◽  
Single Walled Carbon Nanotube ◽  
Heterojunction Solar Cells

The search for novel solar cell designs as an alternative to standard silicon solar cells is important for the future of renewable energy production. One such alternative design is the carbon nanotube/silicon (CNT/Si) heterojunction solar device. In order to improve the performance of large area CNT/Si heterojunction solar cells, a novel organic material, 4,10-bis(bis(4-methoxyphenyl)amino)naptho[7,8,1,2,3-nopqr]tetraphene-6,12-dione (DPA-ANT-DPA (shortened to DAD)), was added as an interlayer between the CNT film and the silicon surface. The interlayer was examined with SEM and AFM imaging to determine an optimal thickness for solar cell performance. The DAD was shown to improve the device performance with the efficiency of large area devices improving from 2.89% ± 0.40% to 3.34% ± 0.10%.

scholarly journals Analysis of The Efficiency In Sb2Se3 Thin-Film Solar Cells Using Alternative Buffer Layers In n-p and n-i-p Structures By Numerical Simulation.

2021 ◽  
Author(s):  
F Ayala-Mato ◽  
O Vigil-Galán ◽  
Maykel Courel ◽  
M. M. Nicolás-Marín
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Defect Density ◽  
Hole Transport ◽  
Inorganic Materials ◽  
Band Alignment ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solar Cell Performance

Abstract Antimony Sulfide (Sb2Se3) Solar Cells are considered a promising emerging photovoltaic devices technology. However, the best reported experimental efficiency (9.2%) is well below the theoretical limit of 30%. In this research is demonstrated, by numerical simulation, that using different buffer or electron transport layers (ETL) and device structures (n-p or n-i-p) can significantly increase the solar cell performance. The study is based on two underlying considerations: the use of inorganic materials to facilitate the manufacturing process and the analysis of the simulation parameters that adjust to the experimental conditions in which the cells can be processed. In the n-p structures, the use of single layers and bilayers as ETL was evaluated and the possible mechanism that explain the electrical parameters of the solar cell were discussed. Especial attention was made in the role of interfacial state density and band alignment in the ETL/Sb2Se3 interface. In addition, the n-i-p structure was studied by adding a hole transport layer (HTL). An improvement in open circuit voltage (Voc) is observed compared with n-p structure. Finally, the behavior of Voc and efficiency vs thickness of the ETL and Sb2Se3 layers was analyzed. The results show that using alternative ETLs a significant improve in Voc and efficiency could be achieved for n-p and n-i-p structures. After thickness optimization and taking account a moderate interface defect density, values of Voc and efficiency higher than 600 mV and 15 % were respectively obtained.

Chalcogenide As Inorganic Transport Layer in Perovskite Solar Cell

2021 ◽  
Author(s):  
Atul kumar
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Band Alignment ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Band Offset ◽  
Primary Concern ◽  
Earth Abundant

Abstract Fill factor (FF) deficit and stability is a primary concern with the perovskite solar cell. Resistance values and band alignment at junction interface in perovskite are causing low fill factor. Moisture sensitivity of methylammonium lead halide perovskite is causing a stability issue. We tried to solve these issues by using inorganic hole transport layer (HTL). FF is sensitive to the band offset values. We study the band alignment/band offset effect at the Perovskite /HTL junction. Inorganic material replacing Spiro-MeOTAD can enhance the stability of the device by providing an insulation from ambient. Our simulation study shows that the earth abundant p-type chalcogenide materials of SnS as HTL in perovskite is comparable to Spiro-MeOTAD efficiency.

scholarly journals Performance Comparison of Different Hole Transport Layer Configurations in a Perovskite-based Solar Cell using SCAPS-1D Simulation

2021 ◽  
Author(s):  
Seyyedreza HOSSEİNİ ◽  
Nagihan DELİBAŞ ◽  
Mahsa BAHRAMGOUR ◽  
Alireza TABATABAEİ MASHAYEKH ◽  
Aligholi NİAİE
Keyword(s):  
Solar Cell ◽  
Performance Comparison ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer
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