scholarly journals Pulsed Electron Paramagnetic Resonance Study of Domain Docking in Neuronal Nitric Oxide Synthase: The Calmodulin and Output State Perspective

2014 ◽  
Vol 118 (34) ◽  
pp. 6864-6872 ◽  
Author(s):  
Andrei V. Astashkin ◽  
Li Chen ◽  
Xixi Zhou ◽  
Huiying Li ◽  
Thomas L. Poulos ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Electron Paramagnetic Resonance ◽  
Electron Paramagnetic Resonance Study ◽  
Neuronal Nitric Oxide Synthase ◽  
Paramagnetic Resonance ◽  
Output State ◽  
Domain Docking ◽  
Oxide Synthase ◽  
Pulsed Electron Paramagnetic Resonance ◽  
Electron Paramagnetic

Modification of Si(001)/SiO2 Interfaces by Nitric Oxide Treatments: An Electron Paramagnetic Resonance Study

1999 ◽  
Vol 592 ◽  
Author(s):  
Jean-Louis Cantin ◽  
Hans Jurgen von Bardeleben
Keyword(s):  
Nitric Oxide ◽  
Electron Paramagnetic Resonance ◽  
Electron Paramagnetic Resonance Spectroscopy ◽  
Electron Paramagnetic Resonance Study ◽  
Thermal Relaxation ◽  
Resonance Spectroscopy ◽  
Paramagnetic Resonance ◽  
Defect Reduction ◽  
N Incorporation ◽  
Electron Paramagnetic

ABSTRACTThe modification of the Si(001)/SiO2 interface and the related interface defect reduction by thermal treatments in nitric oxide (NO) have been studied by Electron Paramagnetic Resonance spectroscopy for 630Å thick and ultrathin (28Å) oxides. The effects of annealing temperature, annealing time and rapid (RTN) or furnace annealing have been explored. Our results show that an appropriate NO treatment can drastically reduce the defect densities if, in addition to N incorporation in the transition layer near the interface, the thermal relaxation of the nitrided oxide is allowed. Our results indicate that NO treatment can lead to “defect free” Si/SiO2 interfaces.

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