Influence of Cationic Precursors on CdS Quantum-Dot-Sensitized Solar Cell Prepared by Successive Ionic Layer Adsorption and Reaction

2013 ◽  
Vol 117 (51) ◽  
pp. 26948-26956 ◽  
Author(s):  
Ru Zhou ◽  
Qifeng Zhang ◽  
Jianjun Tian ◽  
Daniel Myers ◽  
Min Yin ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Layer Adsorption ◽  
Cds Quantum Dot ◽  
Ionic Layer

scholarly journals Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-10
Author(s):  
Ningning Zhang ◽  
Xiaoping Zou ◽  
Yanyan Gao
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Power Conversion ◽  
The Novel ◽  
Silar Method ◽  
Doping Element ◽  
Substitutional Doping ◽  
Layer Adsorption ◽  
Cds Quantum Dot ◽  
Ionic Layer

Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR) method. Bi- and Ag-doped-PbS quantum dot (QD) were produced by admixing Bi3+or Ag+during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that Bi3+entered the cube space of PbS as donor yielding interstitial doping Bi-doped-PbS QD, while Ag+replaced Pb2+of PbS as acceptor yielding substitutional doping Ag-doped-PbS QD. The novel Bi-doped-PbS/CdS and Ag-doped-PbS/CdS quantum dot cosensitized solar cell (QDCSC) were fabricated and power conversion efficiency (PCE) of 2.4% and 2.2% was achieved, respectively, under full sun illumination.

Study on characteristics of CdS quantum dot-sensitized solar cells prepared by successive ionic layer adsorption and reaction with different adsorption times

2014 ◽  
Vol 10 (3) ◽  
pp. 621-626 ◽  
Author(s):  
Myeong-Soo Jeong ◽  
Min-Kyu Son ◽  
Soo-Kyoung Kim ◽  
Songyi Park ◽  
Kandasamy Prabakar ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Layer Adsorption ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells ◽  
Ionic Layer

Improved efficiency of CdS quantum dot sensitized solar cell with an organic redox couple and a polymer counter electrode

2014 ◽  
Vol 137 ◽  
pp. 700-704 ◽  
Author(s):  
Ting Shu ◽  
Xiong Li ◽  
Zhi-Liang Ku ◽  
Shi Wang ◽  
Shi Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Counter Electrode ◽  
Redox Couple ◽  
Cds Quantum Dot

Efficient CdSe Quantum Dot-Sensitized Solar Cells Prepared by an Improved Successive Ionic Layer Adsorption and Reaction Process

Nano Letters ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 4221-4227 ◽  
Author(s):  
HyoJoong Lee ◽  
Mingkui Wang ◽  
Peter Chen ◽  
Daniel R. Gamelin ◽  
Shaik M. Zakeeruddin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Reaction Process ◽  
Layer Adsorption ◽  
Cdse Quantum Dot ◽  
Sensitized Solar Cells ◽  
Ionic Layer

Efficiency Enhancement by Insertion of ZnO Recombination Barrier Layer in CdS Quantum Dot-Sensitized Solar Cells

2021 ◽  
Vol 21 (7) ◽  
pp. 3800-3805
Author(s):  
Abdul Razzaq ◽  
Muhammad Zafar ◽  
Tahir Saif ◽  
Jun Young Lee ◽  
Jung Ki Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Barrier Layer ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Solar Cell Performance ◽  
X Ray ◽  
Cds Quantum Dot ◽  
Back Transfer ◽  
Photovoltaic Characteristics

In this investigation we report the formation of thin ZnO recombination barrier layer at TiO2/CdS interface aimed for the improvement in performance of CdS sensitized solar cell. The film was deposited upon nanocrystalline mesoporous TiO2 surface by following a simple chemical process and characterized, using UV-Visible spectroscopy, X-ray diffraction and electron dispersive X-ray measurements. The insertion of ZnO thin layer enhances the QDSC (Quantum dot sensitized solar cell) performance, contributed mainly by an increase in open circuit voltage (Voc) due to reduced electron back transfer from TiO2 conduction band. Moreover, the analysis of photovoltaic characteristics upon increasing the thickness of the ZnO film reveals that the ZnO recombination barrier layer with optimum thickness at porous TiO2/CdS interface proved to be an effective potential barrier for minimizing electron back recombination.

scholarly journals Study of fabrication of fully aqueous solution processed SnS quantum dot-sensitized solar cell

2019 ◽  
Vol 8 (1) ◽  
pp. 443-450 ◽  
Author(s):  
Kok Kwong Ngoi ◽  
Hieng Kiat Jun
Keyword(s):  
Aqueous Solution ◽  
Solar Cell ◽  
Quantum Dot ◽  
Sodium Sulfide ◽  
Precursor Concentration ◽  
Tauc Plot ◽  
Current Voltage ◽  
Layer Adsorption ◽  
Vis Spectroscopy ◽  
Overall Efficiency

Abstract In this prelimnary work, the aim was to fabricate a simple tin (II) sulfide (SnS) quantum dot-sensitized solar cell (QDSSC) from aqueous solution. The SnS QDSSCs were characterized by using current-voltage test (I-V test), scanning electron microscopy (SEM), and ultraviolet-visible (UV-Vis) spectroscopy. SEM results showed the presence of TiO2 and SnS elements in the sample, confirming the successful synthesis of SnS quantum dots (QDs). The overall efficiency of QDSSCs increased when concentration of the precursor solutions, which were aqueous sodium sulfide and tin (II) sulfate decreased from 0.5 M to 0.05 M. On the other hand, for a fixed precursor concentration, the efficiency of QDSSC reduced once an optimal cycle of of successive ionic layer adsorption and reaction (SILAR) was achieved. The bandgap energies of QDs obtained by extrapolating the Tauc plot were used to predict the QDs size. In general, the QD size was bigger for samples prepared from precursor concentration of 0.5 M, and with higher number of SILAR cycle used. The best performance was obtained from sample prepared from 0.05 M precursor concentration with 4 SILAR cycles.

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