Work Function, Band Bending, and Microwave Conductivity Studies on the Selective Alkane Oxidation Catalyst MoVTeNb Oxide (Orthorhombic M1 Phase) under Operation Conditions

2013 ◽  
Vol 117 (51) ◽  
pp. 26988-26997 ◽  
Author(s):  
Christian Heine ◽  
Michael Hävecker ◽  
Maricruz Sanchez-Sanchez ◽  
Annette Trunschke ◽  
Robert Schlögl ◽  
...  
2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.


2015 ◽  
Vol 17 (14) ◽  
pp. 8983-8993 ◽  
Author(s):  
Christian Heine ◽  
Michael Hävecker ◽  
Annette Trunschke ◽  
Robert Schlögl ◽  
Maik Eichelbaum

Steam modifies the surface structure of the propane oxidation catalyst MoVTeNbOx and increases the selectivity to the product acrylic acid.


2019 ◽  
Vol 10 (8) ◽  
pp. 2429-2443 ◽  
Author(s):  
Xuan Li ◽  
Detre Teschner ◽  
Verena Streibel ◽  
Thomas Lunkenbein ◽  
Liudmyla Masliuk ◽  
...  

The bulk crystal structure of an oxidation catalyst as the most popular descriptor in oxidation catalysis is not solely responsible for catalytic performance.


2009 ◽  
Vol 142 (3-4) ◽  
pp. 320-328 ◽  
Author(s):  
William D. Pyrz ◽  
Douglas A. Blom ◽  
N. Raveendran Shiju ◽  
Vadim V. Guliants ◽  
Thomas Vogt ◽  
...  

2011 ◽  
Vol 54 (10-12) ◽  
pp. 614-626 ◽  
Author(s):  
Xin Li ◽  
Douglas J. Buttrey ◽  
Douglas A. Blom ◽  
Thomas Vogt

1992 ◽  
Vol 46 (20) ◽  
pp. 13293-13302 ◽  
Author(s):  
I. M. Vitomirov ◽  
A. Raisanen ◽  
A. C. Finnefrock ◽  
R. E. Viturro ◽  
L. J. Brillson ◽  
...  

1990 ◽  
Vol 204 ◽  
Author(s):  
Iain D. Baikie

ABSTRACTAlthough the oxidation of Si(111) 7×7, Ge(111) 2×8 surfaces are relatively well understood very little work has been performed at sub monolayer coverage. We have utillsed a custom-built high resolution Kelvin probe to follow the changes in work function, and changes in band-bending and surface state occupancy via Surface Photovoltage Spectroscopy (SPV). The Kelvin probe Is an Ideal tool for such analysis due to Its extremely high surface sensitivity, equivalent to 4×1010 molecules/cm2, or 0.01% of the available sites.We observe a very rapid initial adsorption phase, which has not been found by other surface probes, e.g., AES, EELS, etc, corresponding to the formation of an elementary dipole layer. During this phase the Increase In the effective electron affinity with oxygen uptake achieves a maximum of 1V at 0.3 monolayer (ML), on SI(111) at 300 K. We report, for the first time, SPV spectra of SI(111), at 100 K, indicating quenching of a band of surface states centered around the fermi-level, quenching Is completed at the max-Imum of the work function change.The second adsorption phase, involving oxygen penetration through the surface layer and incorporation Into the lattice, commences at 0.25 ML for Si(111) at 300 K. a much earlier stage than previously reported. Further. we find evidence of a metastable SiO2 precursor at coverages below 1 ML. The dipole layer formation (and breakup) is shown to be very sensitive to both temperature and amount of surface Carbon contamination. The second phase also Involves a substantial reduction In band-bending to nearly flat bands at 2 ML, accounting for 20% of the work function change In the case of SI and almost 90% for Ge.


2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.


2008 ◽  
Vol 14 (S2) ◽  
pp. 2-3 ◽  
Author(s):  
WD Pyrz ◽  
DA Blom ◽  
VV Guliants ◽  
T Vogt ◽  
DJ Buttrey

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


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