Electron Inelastic Mean Free Path Theory and Density Functional Theory Resolving Discrepancies for Low-Energy Electrons in Copper

2014 ◽  
Vol 118 (5) ◽  
pp. 909-914 ◽  
Author(s):  
C. T. Chantler ◽  
J. D. Bourke
2015 ◽  
Vol 49 (1) ◽  
pp. 4-10 ◽  
Author(s):  
Dimitris Emfietzoglou ◽  
Ioanna Kyriakou ◽  
Rafael Garcia-Molina ◽  
Isabel Abril

RSC Advances ◽  
2021 ◽  
Vol 11 (15) ◽  
pp. 8654-8663
Author(s):  
Fatima Zahra Ramadan ◽  
Flaviano José dos Santos ◽  
Lalla Btissam Drissi ◽  
Samir Lounis

Based on density functional theory combined with low-energy models, we explore the magnetic properties of a hybrid atomic-thick two-dimensional (2D) material made of germanene doped with fluorine atoms in a half-fluorinated configuration (Ge2F).


2021 ◽  
Vol 118 (5) ◽  
pp. 053104
Author(s):  
L. H. Yang ◽  
B. Da ◽  
H. Yoshikawa ◽  
S. Tanuma ◽  
J. Hu ◽  
...  

2016 ◽  
Vol 858 ◽  
pp. 1125-1128
Author(s):  
Ioannis Deretzis ◽  
Filippo Giannazzo ◽  
Antonino La Magna

Notwithstanding the graphitization of SiC under high thermal treatment can take place for all SiC surfaces, the quality of the resulting graphene as well as its structural and electrical characteristics strongly depend on the SiC face where growth has taken place. In this paper we use the density functional theory to analyze the structural and electronic properties of epitaxial graphene grown on three different SiC planes. Calculations are presented for the (6√3×6√3)R30°-reconstructed SiC(0001) surface (Si face) as well as the nonpolar SiC(11-20) and SiC(1-100) planes. We argue that the formation of a strongly-bound interface buffer layer is an exclusive property of the SiC(0001) surface. Moreover, our results indicate that nonpolar planes give rise to graphene with a nearly ideal low-energy spectrum.


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