Preparation of Pristine Graphene Sheets and Large-Area/Ultrathin Graphene Films for High Conducting and Transparent Applications

2013 ◽  
Vol 117 (33) ◽  
pp. 17237-17244 ◽  
Author(s):  
Yue Lin ◽  
Jie Jin ◽  
Olga Kusmartsevab ◽  
Mo Song
Keyword(s):  
Graphene Sheets ◽  
Pristine Graphene ◽  
Large Area ◽  
Graphene Films

Ultrahigh conductivity of large area suspended few layer graphene films

2012 ◽  
Vol 101 (26) ◽  
pp. 263101 ◽  
Author(s):  
Nima Rouhi ◽  
Yung Yu Wang ◽  
Peter J. Burke
Keyword(s):  
Large Area ◽  
Layer Graphene ◽  
Graphene Films ◽  
Few Layer Graphene

scholarly journals Monte Carlo-Based Finite Element Method for the Study of Randomly Distributed Vacancy Defects in Graphene Sheets

2018 ◽  
Vol 2018 ◽  
pp. 1-12
Author(s):  
Liu Chu ◽  
Jiajia Shi ◽  
Eduardo Souza de Cursi ◽  
Xunqian Xu ◽  
Yazhou Qin ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Monte Carlo ◽  
Natural Frequencies ◽  
Vacancy Defect ◽  
Honeycomb Lattice ◽  
Graphene Sheets ◽  
Pristine Graphene ◽  
Vacancy Defects ◽  
Element Method

This paper proposed an effective stochastic finite element method for the study of randomly distributed vacancy defects in graphene sheets. The honeycomb lattice of graphene is represented by beam finite elements. The simulation results of the pristine graphene are in accordance with literatures. The randomly dispersed vacancies are propagated and performed in graphene by integrating Monte Carlo simulation (MCS) with the beam finite element model (FEM). The results present that the natural frequencies of different vibration modes decrease with the augment of the vacancy defect amount. When the vacancy defect reaches 5%, the regularity and geometrical symmetry of displacement and rotation in vibration behavior are obviously damaged. In addition, with the raise of vacancy defects, the random dispersion position of vacancy defects increases the variance in natural frequencies. The probability density distributions of natural frequencies are close to the Gaussian and Weibull distributions.

Efficient heat generation in large-area graphene films by electromagnetic wave absorption

2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 025037 ◽  
Author(s):  
Sangmin Kang ◽  
Haehyun Choi ◽  
Soo Bin Lee ◽  
Seong Chae Park ◽  
Jong Bo Park ◽  
...  
Keyword(s):  
Electromagnetic Wave ◽  
Heat Generation ◽  
Large Area ◽  
Electromagnetic Wave Absorption ◽  
Wave Absorption ◽  
Graphene Films

Large-area Metrology of CVD-grown Graphene Layers on Copper Foil Substrates

2012 ◽  
Vol 1451 ◽  
pp. 45-49
Author(s):  
Dennis L. Pleskot ◽  
Jennifer R. Kyle ◽  
Maziar Ghazinejad ◽  
Shirui Guo ◽  
Isaac Ruiz ◽  
...  
Keyword(s):  
Effective Means ◽  
Single Layer ◽  
Pristine Graphene ◽  
Large Area ◽  
Fluorescence Image ◽  
Graphene Layers ◽  
Graphene Sample ◽  
Doped Graphene ◽  
Grown Graphene

ABSTRACTFluorescence Quenching Microscopy has been shown to be an effective means of characterizing graphene on the macroscale. Centimeter-scale CVD-grown pristine and doped graphene were manufactured in a high temperature (1000°C) furnace on pristine copper substrates. The copper was then etched away in a FeCl3solution and the graphene was coated with DCM-based fluorescent dye before being imaged in a fluorescence microscope. The fluorescence image was then image-processed using modified Matlab software. The resulting image showed clear contrast between the pristine graphene sheet and defects on the graphene surface, which revealed that fluorescence microscopy could determine the quality of a large region of graphene. Also, significant contrast was identified between single-layer and multi-layer regions, showing that this technique is also effective at determining the degree of uniformity within a graphene sample. Lastly, the fluorescence images showed contrast between doped and undoped regions of graphene.

Cytotoxicity Assessment of SH-SY5Y Cells Grown on Graphene Sheet

2015 ◽  
Vol 1110 ◽  
pp. 311-314
Author(s):  
Hong Gi Oh ◽  
Hyo Geun Nam ◽  
Kwang Hwan Jhee ◽  
Joon Mook Lim ◽  
Kwang Soup Song
Keyword(s):  
Cell Culture ◽  
Control Cell ◽  
Culture Conditions ◽  
Graphene Sheets ◽  
Pristine Graphene ◽  
Biological Applications ◽  
Calcein Am ◽  
Cytotoxicity Assessment ◽  
Human Nerve ◽  
Cell Culture Conditions

We investigate the effect of cell culture conditions, using pristine graphene sheets as growth substrate, on the human nerve cell line (SH-SY5Y). In order to evaluate cell viability and morphology, we applied the 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) assay, and fluorescence microscopy of cells stained with Hochest 33342 and Calcein AM. Human nerve cells exhibited 84% viability on pristine graphene sheets compared with control (cell culture polystyrene) after 3 days culturing. Fluorescence data showed that the presence of graphene did not influence cell morphology. These results suggest that graphene sheets may be used for biological applications.

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 633-636 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
James C. Culbertson ◽  
Glenn G. Jernigan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Transfer Processes ◽  
Thermal Release ◽  
Graphene Films ◽  
High Carrier ◽  
The Impact

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.

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