Thermochemical Parameters and Growth Mechanism of the Boron-Doped Silicon Clusters, SinBq with n = 1–10 and q = −1, 0, +1

2012 ◽  
Vol 116 (37) ◽  
pp. 20086-20098 ◽  
Author(s):  
Nguyen Minh Tam ◽  
Truong Ba Tai ◽  
Minh Tho Nguyen
Keyword(s):  
Growth Mechanism ◽  
Silicon Clusters ◽  
Boron Doped ◽  
Doped Silicon ◽  
Thermochemical Parameters

Structures, stabilities and electronic properties of boron-doped silicon clusters B3Sin (n=1–17) and their anions

2018 ◽  
Vol 117 (4) ◽  
pp. 382-394 ◽  
Author(s):  
Cheng-Gang Li ◽  
Jin-Hai Gao ◽  
Jie Zhang ◽  
Wan-Ting Song ◽  
Shui-Qing Liu ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Silicon Clusters ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals THERMOCHEMICAL PARAMETERS OF SOME SMALL PURE AND DOPED SILICON CLUSTERS

2018 ◽  
Vol 55 (6A) ◽  
pp. 18
Author(s):  
Nguyen Minh Tam
Keyword(s):  
Quantum Chemical ◽  
Large Error ◽  
Basis Set ◽  
Coupled Cluster ◽  
Electron Affinities ◽  
Silicon Clusters ◽  
Coupled Cluster Theory ◽  
Doped Silicon ◽  
Thermochemical Parameters ◽  
Quantum Chemical Computations

Quantum chemical computations of thermochemical parameters of several series of small pure and doped silicon clusters are reviewed. We analyzed the performance of the coupled-cluster theory with energies extrapolated up to complet basis set, CCSD(T)/CBS and the composite G4 method in determining the total atomization energies (TAE), standard heats of formation (∆fH0), electron affinities (EA) and ionization energies (IE) and other thermochemical parameters with respect to available experimental data. The latter were determined with large error margins.

Infrared Spectroscopy and Structures of Boron-Doped Silicon Clusters (SinBm, n = 3–8, m = 1–2)

2017 ◽  
Vol 121 (17) ◽  
pp. 9560-9571 ◽  
Author(s):  
Nguyen Xuan Truong ◽  
Bertram Klaus August Jaeger ◽  
Sandy Gewinner ◽  
Wieland Schöllkopf ◽  
André Fielicke ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Silicon Clusters ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals NEUTRAL AND CATIONIC TITANIUM-DOPED SILICON CLUSTERS: GROWTH MECHANISM AND STABILIT

2018 ◽  
Vol 55 (6A) ◽  
pp. 83
Author(s):  
Nguyen Thi Ngoc Tuyet
Keyword(s):  
Ab Initio ◽  
Growth Mechanism ◽  
Growth Patterns ◽  
Ab Initio Study ◽  
Silicon Clusters ◽  
Doped Silicon ◽  
Charged Clusters ◽  
High Coordination

We report ab-initio study on neutral and cationic titanium-doped silicon clusters TiSin0/+              (n = 1-10). The growth patterns for both neutral and charged clusters are revealed. The neutral TiSin clusters follow a consistent rule of addition: the larger TiSin cluster is built up by adding a Si atom on the smaller TiSin-1 cluster. However, the Ti atom prefers to substitute at a high-coordination position to form the cationic clusters. The neutral TiSin clusters is more stable than the pure Sin+1 clusters while the cationic TiSin+ is less stable than the pure ones. Both neutral and cationic clusters tend to loss Si atom rather than Ti atoms. 

Ab initio study of medium sized boron-doped silicon clusters SinBm, n = 11–13, m = 1–3

2018 ◽  
Vol 20 (27) ◽  
pp. 18556-18570 ◽  
Author(s):  
Emmanuel N. Koukaras
Keyword(s):  
Ab Initio ◽  
Ab Initio Study ◽  
Silicon Clusters ◽  
Boron Doped ◽  
Doped Silicon

Structures and detailed properties of medium sized boron-doped silicon clusters.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Finite Temperature Behavior of Carbon Atom Doped Silicon Clusters: Depressed Thermal Stabilities, Co-existing isomers, Reversible Dynamical Pathways and Fragmentation Channels

2021 ◽  
Author(s):  
Krati Joshi ◽  
Ashakiran Maibam ◽  
Sailaja Krishnamurty
Keyword(s):  
Silicon Carbide ◽  
Carbon Atom ◽  
Finite Temperature ◽  
Asymptotic Giant Branch ◽  
Temperature Behavior ◽  
Asymptotic Giant Branch Stars ◽  
Silicon Clusters ◽  
Thermal Stabilities ◽  
Doped Silicon ◽  
Giant Branch Stars

Silicon carbide clusters are significant due to their predominant occurrence in meteoric star dust, particularly in carbon rich asymptotic giant branch stars. Of late, they have also been recognized as...

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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