scholarly journals Thermal Conductivity of Ordered Mesoporous Nanocrystalline Silicon Thin Films Made from Magnesium Reduction of Polymer-Templated Silica

2012 ◽  
Vol 116 (23) ◽  
pp. 12926-12933 ◽  
Author(s):  
Jin Fang ◽  
Chris B. Kang ◽  
Yi Huang ◽  
Sarah H. Tolbert ◽  
Laurent Pilon
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Ordered Mesoporous

scholarly journals The effect of ultrasmall grain sizes on the thermal conductivity of nanocrystalline silicon thin films

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Battogtokh Jugdersuren ◽  
Brian T. Kearney ◽  
James C. Culbertson ◽  
Christopher N. Chervin ◽  
Michael B. Katz ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Size ◽  
Thermoelectric Materials ◽  
Mass Density ◽  
Mean Free Path ◽  
Nanocrystalline Silicon ◽  
Density Fluctuations ◽  
Grain Sizes ◽  
Silicon Thin Films

AbstractNanocrystallization has been an important approach for reducing thermal conductivity in thermoelectric materials due to limits on phonon mean-free path imposed by the characteristic structural size. We report on thermal conductivity as low as 0.3 Wm−1K−1 of nanocrystalline silicon thin films prepared by plasma-enhanced chemical-vapor deposition as grain size is reduced to 2.8 nm by controlling hydrogen dilution of silane gas during growth. A multilayered film composed by alternating growth conditions, with layer thicknesses of 3.6 nm, is measured to have a thermal conductivity 30% and 15% lower than its two constituents. Our quantitative analysis attributes the strong reduction of thermal conductivity with decreasing grain size to the magnifying effect of porosity which occurs concomitantly due to increased mass density fluctuations. Our results demonstrate that ultrasmall grain sizes, multilayering, and porosity, all at a similar nanometer-size scale, may be a promising way to engineer thermoelectric materials.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering

2002 ◽  
Vol 403-404 ◽  
pp. 91-96 ◽  
Author(s):  
C. Gonçalves ◽  
S. Charvet ◽  
A. Zeinert ◽  
M. Clin ◽  
K. Zellama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament
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