Porous Nanostructures and Thermoelectric Power Measurement of Electro-Less Etched Black Silicon

2012 ◽  
Vol 116 (25) ◽  
pp. 13767-13773 ◽  
Author(s):  
Guodong Yuan ◽  
Rüdiger Mitdank ◽  
Anna Mogilatenko ◽  
Saskia F. Fischer
Keyword(s):  
Thermoelectric Power ◽  
Power Measurement ◽  
Black Silicon ◽  
Porous Nanostructures ◽  
Thermoelectric Power Measurement

KINETIC STUDY OF AGING IN A URANIUM-TITANIUM EUTECTOID ALLOY USING THERMOELECTRIC POWER MEASUREMENT

2008 ◽  
Author(s):  
B. Herrmann ◽  
Y. Gelbstein ◽  
G. Kimmel ◽  
A. Landau ◽  
Donald O. Thompson ◽  
...  
Keyword(s):  
Kinetic Study ◽  
Thermoelectric Power ◽  
Power Measurement ◽  
Thermoelectric Power Measurement ◽  
Eutectoid Alloy

Thermoelectric Method of Plastic Deformation Detection

2018 ◽  
Vol 938 ◽  
pp. 112-118 ◽  
Author(s):  
A.I. Soldatov ◽  
A.A. Soldatov ◽  
P.V. Sorokin ◽  
A.A. Abouellail ◽  
M.A. Kostina
Keyword(s):  
Plastic Deformation ◽  
Thermoelectric Power ◽  
Power Measurement ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Measuring Device ◽  
Thermoelectric Method ◽  
Maximum Change ◽  
Thermoelectric Power Measurement ◽  
Non Destructive

The paper presents an approach of non-destructive testing of plastic deformation of metals and alloys by measuring the differential thermoelectric power. Using the developed measuring device for this purpose, measurements of thermoelectric power were performed on several types of steels that are used in the manufacture of product pipelines. Incisions were made on the surface of the testes objects, for the purpose of experimental detection of the place of plastic deformation. In the process of stretching, thermoelectric power was measured at and near the place of the proposed plastic deformation. During the process of stretching the sample, the decrease in thermoelectric power measurement occurs almost linearly. The maximum change in the thermoelectric power measurement of the tested object was observe before the rapture discontinuity.

Thermoelectric Power Measurement of Catalyst-free Si-doped GaAs Nanowires

2012 ◽  
Vol 1439 ◽  
pp. 83-87 ◽  
Author(s):  
Masahito Yamaguchi ◽  
Jihyun Paek ◽  
Hiroshi Amano
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Power Measurement ◽  
Hole Density ◽  
Thermoelectric Power Factor ◽  
Gaas Nanowires ◽  
Thermoelectric Power Measurement ◽  
Si Doped

ABSTRACTSi-doped GaAs nanowires (NWs) were grown on (111)Si substrate by MBE-VLS method. The electrical characteristics of the GaAs NWs were measured. A joule heater was arranged near the tip of NW for making the gradient of substrate temperature. The obtained Seebeck coefficient of the GaAs NW increases linearly with a rise in temperature. The thermoelectric power of the Si doped GaAs NW was determined by the hole diffusion. It was estimated that the hole density in the Si-doped GaAs NW at room temperature was 5.9×1018 cm-3 from the slope of the temperature dependence of the Seebeck coefficient in the Si-doped GaAs NW. At room temperature, the Seebeck coefficient, thermoelectric power factor, and thermoelectric figure of merit (ZT) were 429 μV/K, 271μW/mK2, and 1.5×10-3, respectively.

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