Tuning the Electronic Transport Properties of Zigzag Graphene Nanoribbons via Hydrogenation Separators

2011 ◽  
Vol 115 (49) ◽  
pp. 24366-24372 ◽  
Author(s):  
Xiao-Fei Li ◽  
Ling-Ling Wang ◽  
Ke-Qiu Chen ◽  
Yi Luo
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Graphene Nanoribbons ◽  
Electronic Transport Properties ◽  
Zigzag Graphene Nanoribbons

scholarly journals Design of boron vacancy enhanced spin filtering graphene/BN zigzag nanoribbon heterojunctions

RSC Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 7368-7374 ◽  
Author(s):  
Xiaohui Jiang ◽  
Dongqing Zou ◽  
Bin Cui ◽  
Changfeng Fang ◽  
Wen Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Transport Properties ◽  
External Electric Field ◽  
Electronic Transport ◽  
Graphene Nanoribbons ◽  
Electronic Transport Properties ◽  
Spin Polarized ◽  
Boron Nitride Nanoribbons ◽  
Zigzag Graphene Nanoribbons

The spin-polarized electronic transport properties of zigzag graphene nanoribbons (ZGNRs) and boron nitride nanoribbons (ZBNNRs) heterojunctions with a boron vacancy are investigated under an external electric field.

scholarly journals Tuning Electronic Transport Properties of Zigzag Graphene Nanoribbons with Stone-Wales Defect

2018 ◽  
Vol 28 (3) ◽  
pp. 201 ◽  
Author(s):  
Tien Thanh Nguyen ◽  
Hoc Thai Bui ◽  
Ut Van Nguyen ◽  
Tuan Le
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Local Density ◽  
Differential Resistance ◽  
Electronic Transport Properties ◽  
Densities Of States ◽  
Current Characteristics ◽  
Zigzag Graphene Nanoribbons

Influences of the symmetric Stone-Wales (SW) defect on the electronic transport properties of the zigzag graphene nanoribbons (ZGNRs) has been studied using $\it{ab}$ $\it{ initio}$ simulation based on density functional theory (DFT) combined with non-equilibrium Green's function (NEGF) technique. The calculated transmission spectra T(E) at various bias windows, device densities of states (DDOS), current characteristics as well as local density of states (LDOS) of the defective asymmetric and symmetric ZGNRs are presented in comparison of those for the pristine ZGNRs. It has been established the metallic character of the electronic transport in asymmetric ZGNRs, and in symmetric ones, the current has a semiconductor behavior, with negative differential resistance (NDR) effect. Symmetric SW defect, as a most unfavorable SW defect type for electric conductance, remarkably decreases the current values, but does not change the character of conductivity in both the asymmetric and symmetric ZGNRs. NDR has been explained by the altering by SW defect the number of frontier molecular orbitals entering bias windows.

Effect of Chemical Doping on the Electronic Transport Properties of Tailoring Graphene Nanoribbons

2018 ◽  
Vol 35 (6) ◽  
pp. 067101
Author(s):  
Yang Liu ◽  
Cai-Juan Xia ◽  
Bo-Qun Zhang ◽  
Ting-Ting Zhang ◽  
Yan Cui ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Graphene Nanoribbons ◽  
Chemical Doping ◽  
Electronic Transport Properties

First-principles study of electronic transport properties of graphene nanoribbons with pentagon-heptagon (5-7) line defects

2015 ◽  
Vol 1727 ◽  
Author(s):  
Yasutaka Nishida ◽  
Takashi Yoshida ◽  
Fumihiko Aiga ◽  
Yuichi Yamazaki ◽  
Hisao Miyazaki ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
First Principles ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Edge State ◽  
Line Defect ◽  
Electronic Transport Properties ◽  
Current Voltage ◽  
Line Defects

ABSTRACTIn this study, we investigated the influence of line defects consisting of pentagon-heptagon (5-7) pairs on the electronic transport properties of zigzag-edged and armchair-edged graphene nanoribbons (GNRs). Using the first-principles density functional theory, we study their electronic properties. To investigate their current-voltage (I-V) characteristics at low bias voltage (∼ 1 meV), we use the nonequilibrium Green’s function method. As a result, we found that the conductance of the GNRs having a connected line defect between source and drain shows better performance than that of the ideal zigzag-edged GNRs (ZGNRs). A detailed investigation of the transmission spectra and the wave function around the Fermi level reveals that the line defects arranged along the transport direction work similar to an edge state of the ZGNRs and can be an additional conduction channel. Our results suggest that such a line defect can be effective for low-resistance GNR interconnects.

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