Solution-Processed Networks of Silicon Nanocrystals: The Role of Internanocrystal Medium on Semiconducting Behavior

2011 ◽  
Vol 115 (41) ◽  
pp. 20120-20127 ◽  
Author(s):  
R. N. Pereira ◽  
S. Niesar ◽  
W. B. You ◽  
A. F. da Cunha ◽  
N. Erhard ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Solution Processed ◽  
Semiconducting Behavior

Photoluminescence behavior of silicon nanocrystals: Role of surface chemistry and size

2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers
Keyword(s):  
Surface Chemistry ◽  
Silicon Nanocrystals ◽  
Photoluminescence Behavior

On the role of solution-processed bathocuproine in high-efficiency inverted perovskite solar cells

Solar Energy ◽  
2021 ◽  
Vol 218 ◽  
pp. 142-149
Author(s):  
Shou-En Chiang ◽  
Anjali Chandel ◽  
Diksha Thakur ◽  
Yan-Ta Chen ◽  
Pei-Chen Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Solution Processed

The Role of Weak Molecular Dopants in Enhancing the Performance of Solution-Processed Organic Field-Effect Transistors

2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

scholarly journals Nb Substitution Effects on Superconducting Properties ofRu1−xNbxSr2Eu1.4Ce0.6Cu2O10−δ

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
J. L. Maldonado-Mejía ◽  
J. D. Quiz-Celestino ◽  
M. E. Botello-Zubiate ◽  
S. A. Palomares-Sánchez ◽  
J. A. Matutes-Aquino
Keyword(s):  
Solid State Reaction Method ◽  
Substitution Effects ◽  
Superconducting Transition ◽  
Metallic Behavior ◽  
Resistivity Measurements ◽  
Niobium Doping ◽  
Method Substitution ◽  
Insight Into ◽  
Semiconducting Behavior

In order to gain further insight into the role of substitution of Ru by Nb on superconductivity, polycrystalline samples of Ru1−xNbxSr2Eu1.4Ce0.6Cu2O10−δ  (0.0 ≤x≤ 1.0) have been synthesized by solid-state reaction method. Substitution of Nb at the Ru site in the system takes place isostructurally in the tetragonal structure (space groupI4/mmm) with full solubility (x= 1.0). Superconductivity exists for all compositions. Resistivity measurements in function of temperature from 0 to 300 K were done using the four-probe technique. It is found that the substitution of Ru5+for Nb5+depresses the superconductivity of samples fromTc = 29 K forx= 0.0 toTc = 5 K forx= 1.0 (whereTcis the critical temperature, when resistivity becomes equal to zero). In the normal state, the dependence of resistivity with temperature, for compositions withx = 0.0 and 0.2, shows a metallic behavior, while for compositions betweenx= 0.4 andx= 1 it shows a semiconducting behavior. In that way, the density of charge carriers is reduced with niobium doping, leading to the semiconducting behavior. The resistive transition to the superconducting state of all samples is found to be affected by granularity. Samples undergo double superconducting transition.

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

The Role of Sulfur in Solution-Processed Cu2ZnSn(S,Se)4and its Effect on Defect Properties

2012 ◽  
Vol 23 (11) ◽  
pp. 1466-1471 ◽  
Author(s):  
Hsin-Sheng Duan ◽  
Wenbing Yang ◽  
Brion Bob ◽  
Chia-Jung Hsu ◽  
Bao Lei ◽  
...  
Keyword(s):  
Solution Processed

Nanoconfining solution-processed organic semiconductors for emerging optoelectronics

2021 ◽  
Author(s):  
Yuze Zhang ◽  
Alina Chen ◽  
Min-Woo Kim ◽  
Aida Alaei ◽  
Stephanie S. Lee
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Light Emission ◽  
Solution Processed ◽  
Semiconductor Crystals

This tutorial review highlights the role of nanoconfinement in selecting for orientations and polymorphs of organic semiconductor crystals that are optimized for optoelectronic processes, including charge transport and light emission.

Role of Solution-processed V2O5in Organic Solar Cell

2013 ◽  
Vol 34 (9) ◽  
pp. 1245-1249
Author(s):  
李嘉琪 LI Jia-qi ◽  
刘彩霞 LIU Cai-xia ◽  
郭文滨 GUO Wen-bin
Keyword(s):  
Solar Cell ◽  
Organic Solar Cell ◽  
Solution Processed
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