Band Gap Tunability in Semiconductor Nanocrystals by Strain: Size and Temperature Effect

2011 ◽  
Vol 115 (14) ◽  
pp. 6462-6466 ◽  
Author(s):  
Ziming Zhu ◽  
Ai Zhang ◽  
Gang Ouyang ◽  
Guowei Yang
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.


2014 ◽  
Vol 1 (1) ◽  
pp. 81-86 ◽  
Author(s):  
Chong Xiao ◽  
Kun Li ◽  
Jiajia Zhang ◽  
Wei Tong ◽  
Youwen Liu ◽  
...  

2009 ◽  
Vol 105 (7) ◽  
pp. 073106 ◽  
Author(s):  
Takahisa Omata ◽  
Katsuhiro Nose ◽  
Shinya Otsuka-Yao-Matsuo

Nano Letters ◽  
2012 ◽  
Vol 12 (6) ◽  
pp. 2948-2952 ◽  
Author(s):  
Zvicka Deutsch ◽  
Osip Schwartz ◽  
Ron Tenne ◽  
Ronit Popovitz-Biro ◽  
Dan Oron

ChemInform ◽  
2011 ◽  
Vol 42 (41) ◽  
pp. no-no ◽  
Author(s):  
Yu-Hsiang A. Wang ◽  
Xiaoyan Zhang ◽  
Ningzhong Bao ◽  
Baoping Lin ◽  
Arunava Gupta

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